The g-C3N4-TiO2 nanocomposite for non-volatile memory and artificial synaptic device applications

S. L. Patil; O. Y. Pawar; H. S. Patil; S. S. Sutar; G. U. Kamble; Deok kee Kim; Jin Hyeok Kim; Tae Geun Kim; R. K. Kamat; T. D. Dongale; N. L. Tarwal

doi:10.1016/j.jallcom.2023.171024

The g-C₃N₄-TiO₂ nanocomposite for non-volatile memory and artificial synaptic device applications

S. L. Patil, O. Y. Pawar, H. S. Patil, S. S. Sutar, G. U. Kamble, Deok kee Kim, Jin Hyeok Kim, Tae Geun Kim, R. K. Kamat, T. D. Dongale, N. L. Tarwal

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Recently, 2D layered materials like graphitic carbon nitride (g-C₃N₄) are gaining significant attention due to their excellent structural and electronic properties. Metal oxide and g-C₃N₄ composite can enhance chemical and electronic properties which can ultimately enhance device performance. Given this, we report the synthesis of g-C₃N₄–TiO₂ nanocomposite by the ex-situ (solid state reaction) method for resistive switching (RS) applications. Initially, the TiO₂ nanoparticles (NPs) were optimized by using annealing them at different temperatures and composited with the g-C₃N₄. The devices fabricated using g-C₃N₄–TiO₂ nanocomposite shows good RS properties at very low SET and RESET voltages (< 0.5 V), similar to the biological voltage scale. The distribution of switching voltages of all devices was studied using the cumulative probability and Weibull distribution techniques. Moreover, switching voltages were modeled and predicted using the statistical time series analysis method. All fabricated devices demonstrated the double-valued charge flux characteristics, suggesting the presence of a non-ideal memristor effect. The optimized g-C₃N₄-TiO₂ (TiO₂ NPs annealed at 450 °C) device shows good endurance and retention memory properties. Moreover, the optimized g-C₃N₄-TiO₂ device can mimic the various bio-synaptic properties such as potentiation-depression, excitatory postsynaptic current, and paired-pulse facilitation. The charge transport results reveal that Ohmic and Child's square law dominated the conduction of the device. Based on electrical and charge transport results, a plausible filamentary RS effect is presented. This study suggested that the g-C₃N₄-TiO₂ is beneficial for both memory and neuromorphic computing applications.

Original language	English
Article number	171024
Journal	Journal of Alloys and Compounds
Volume	962
DOIs	https://doi.org/10.1016/j.jallcom.2023.171024
Publication status	Published - 2023 Nov 5

Bibliographical note

Funding Information:
Ms. Snehal L. Patil would like to thank Chhatrapati Shahu Maharaj Research, Traning and Human Development Institute (SARTHI), Pune for providing the financial Support. Dr. N. L. Tarwal is thankful to DST-SERB for providing financial assistance through the Teachers Associateship for Research Excellence (TARE) scheme ( TAR/2021/000307 ). The financial assistance through DST-PURSE Phase-II ( 2018–2023 ) and UGC DSA-Phase II ( 2018–2023 ) is highly acknowledged. Dr. Tukaram D. Dongale would like to thank the Science and Engineering Research Board (DST-GoI) for providing the research grant through State University Research Excellence (SERB–SURE) scheme ( SUR/2022/000765 ). Prof. Jin Hyeok Kim is thankful to the priority research Centres Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology ( 2018R1A6A1A03024334 ) as well as the National Research Foundation of Korea (NRF) grant funded by the government of the Republic of Korea (MSIT) (No. 2022R1A2C2007219 ).

Publisher Copyright:
© 2023 Elsevier B.V.

Keywords

Ex-Situ method
g-CN-TiO nanocomposite
Memristor
Resistive switching
Synaptic learning
Time series analysis

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.jallcom.2023.171024

Cite this

@article{6896225029764682b30bb73b9828b312,

title = "The g-C3N4-TiO2 nanocomposite for non-volatile memory and artificial synaptic device applications",

abstract = "Recently, 2D layered materials like graphitic carbon nitride (g-C3N4) are gaining significant attention due to their excellent structural and electronic properties. Metal oxide and g-C3N4 composite can enhance chemical and electronic properties which can ultimately enhance device performance. Given this, we report the synthesis of g-C3N4–TiO2 nanocomposite by the ex-situ (solid state reaction) method for resistive switching (RS) applications. Initially, the TiO2 nanoparticles (NPs) were optimized by using annealing them at different temperatures and composited with the g-C3N4. The devices fabricated using g-C3N4–TiO2 nanocomposite shows good RS properties at very low SET and RESET voltages (< 0.5 V), similar to the biological voltage scale. The distribution of switching voltages of all devices was studied using the cumulative probability and Weibull distribution techniques. Moreover, switching voltages were modeled and predicted using the statistical time series analysis method. All fabricated devices demonstrated the double-valued charge flux characteristics, suggesting the presence of a non-ideal memristor effect. The optimized g-C3N4-TiO2 (TiO2 NPs annealed at 450 °C) device shows good endurance and retention memory properties. Moreover, the optimized g-C3N4-TiO2 device can mimic the various bio-synaptic properties such as potentiation-depression, excitatory postsynaptic current, and paired-pulse facilitation. The charge transport results reveal that Ohmic and Child's square law dominated the conduction of the device. Based on electrical and charge transport results, a plausible filamentary RS effect is presented. This study suggested that the g-C3N4-TiO2 is beneficial for both memory and neuromorphic computing applications.",

keywords = "Ex-Situ method, g-CN-TiO nanocomposite, Memristor, Resistive switching, Synaptic learning, Time series analysis",

author = "Patil, {S. L.} and Pawar, {O. Y.} and Patil, {H. S.} and Sutar, {S. S.} and Kamble, {G. U.} and Kim, {Deok kee} and Kim, {Jin Hyeok} and Kim, {Tae Geun} and Kamat, {R. K.} and Dongale, {T. D.} and Tarwal, {N. L.}",

note = "Funding Information: Ms. Snehal L. Patil would like to thank Chhatrapati Shahu Maharaj Research, Traning and Human Development Institute (SARTHI), Pune for providing the financial Support. Dr. N. L. Tarwal is thankful to DST-SERB for providing financial assistance through the Teachers Associateship for Research Excellence (TARE) scheme ( TAR/2021/000307 ). The financial assistance through DST-PURSE Phase-II ( 2018–2023 ) and UGC DSA-Phase II ( 2018–2023 ) is highly acknowledged. Dr. Tukaram D. Dongale would like to thank the Science and Engineering Research Board (DST-GoI) for providing the research grant through State University Research Excellence (SERB–SURE) scheme ( SUR/2022/000765 ). Prof. Jin Hyeok Kim is thankful to the priority research Centres Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology ( 2018R1A6A1A03024334 ) as well as the National Research Foundation of Korea (NRF) grant funded by the government of the Republic of Korea (MSIT) (No. 2022R1A2C2007219 ). Publisher Copyright: {\textcopyright} 2023 Elsevier B.V.",

year = "2023",

month = nov,

day = "5",

doi = "10.1016/j.jallcom.2023.171024",

language = "English",

volume = "962",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - The g-C3N4-TiO2 nanocomposite for non-volatile memory and artificial synaptic device applications

AU - Patil, S. L.

AU - Pawar, O. Y.

AU - Patil, H. S.

AU - Sutar, S. S.

AU - Kamble, G. U.

AU - Kim, Deok kee

AU - Kim, Jin Hyeok

AU - Kim, Tae Geun

AU - Kamat, R. K.

AU - Dongale, T. D.

AU - Tarwal, N. L.

N1 - Funding Information: Ms. Snehal L. Patil would like to thank Chhatrapati Shahu Maharaj Research, Traning and Human Development Institute (SARTHI), Pune for providing the financial Support. Dr. N. L. Tarwal is thankful to DST-SERB for providing financial assistance through the Teachers Associateship for Research Excellence (TARE) scheme ( TAR/2021/000307 ). The financial assistance through DST-PURSE Phase-II ( 2018–2023 ) and UGC DSA-Phase II ( 2018–2023 ) is highly acknowledged. Dr. Tukaram D. Dongale would like to thank the Science and Engineering Research Board (DST-GoI) for providing the research grant through State University Research Excellence (SERB–SURE) scheme ( SUR/2022/000765 ). Prof. Jin Hyeok Kim is thankful to the priority research Centres Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology ( 2018R1A6A1A03024334 ) as well as the National Research Foundation of Korea (NRF) grant funded by the government of the Republic of Korea (MSIT) (No. 2022R1A2C2007219 ). Publisher Copyright: © 2023 Elsevier B.V.

PY - 2023/11/5

Y1 - 2023/11/5

N2 - Recently, 2D layered materials like graphitic carbon nitride (g-C3N4) are gaining significant attention due to their excellent structural and electronic properties. Metal oxide and g-C3N4 composite can enhance chemical and electronic properties which can ultimately enhance device performance. Given this, we report the synthesis of g-C3N4–TiO2 nanocomposite by the ex-situ (solid state reaction) method for resistive switching (RS) applications. Initially, the TiO2 nanoparticles (NPs) were optimized by using annealing them at different temperatures and composited with the g-C3N4. The devices fabricated using g-C3N4–TiO2 nanocomposite shows good RS properties at very low SET and RESET voltages (< 0.5 V), similar to the biological voltage scale. The distribution of switching voltages of all devices was studied using the cumulative probability and Weibull distribution techniques. Moreover, switching voltages were modeled and predicted using the statistical time series analysis method. All fabricated devices demonstrated the double-valued charge flux characteristics, suggesting the presence of a non-ideal memristor effect. The optimized g-C3N4-TiO2 (TiO2 NPs annealed at 450 °C) device shows good endurance and retention memory properties. Moreover, the optimized g-C3N4-TiO2 device can mimic the various bio-synaptic properties such as potentiation-depression, excitatory postsynaptic current, and paired-pulse facilitation. The charge transport results reveal that Ohmic and Child's square law dominated the conduction of the device. Based on electrical and charge transport results, a plausible filamentary RS effect is presented. This study suggested that the g-C3N4-TiO2 is beneficial for both memory and neuromorphic computing applications.

AB - Recently, 2D layered materials like graphitic carbon nitride (g-C3N4) are gaining significant attention due to their excellent structural and electronic properties. Metal oxide and g-C3N4 composite can enhance chemical and electronic properties which can ultimately enhance device performance. Given this, we report the synthesis of g-C3N4–TiO2 nanocomposite by the ex-situ (solid state reaction) method for resistive switching (RS) applications. Initially, the TiO2 nanoparticles (NPs) were optimized by using annealing them at different temperatures and composited with the g-C3N4. The devices fabricated using g-C3N4–TiO2 nanocomposite shows good RS properties at very low SET and RESET voltages (< 0.5 V), similar to the biological voltage scale. The distribution of switching voltages of all devices was studied using the cumulative probability and Weibull distribution techniques. Moreover, switching voltages were modeled and predicted using the statistical time series analysis method. All fabricated devices demonstrated the double-valued charge flux characteristics, suggesting the presence of a non-ideal memristor effect. The optimized g-C3N4-TiO2 (TiO2 NPs annealed at 450 °C) device shows good endurance and retention memory properties. Moreover, the optimized g-C3N4-TiO2 device can mimic the various bio-synaptic properties such as potentiation-depression, excitatory postsynaptic current, and paired-pulse facilitation. The charge transport results reveal that Ohmic and Child's square law dominated the conduction of the device. Based on electrical and charge transport results, a plausible filamentary RS effect is presented. This study suggested that the g-C3N4-TiO2 is beneficial for both memory and neuromorphic computing applications.

KW - Ex-Situ method

KW - g-CN-TiO nanocomposite

KW - Memristor

KW - Resistive switching

KW - Synaptic learning

KW - Time series analysis

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U2 - 10.1016/j.jallcom.2023.171024

DO - 10.1016/j.jallcom.2023.171024

M3 - Article

AN - SCOPUS:85164351628

SN - 0925-8388

VL - 962

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

M1 - 171024

ER -