The impact of oxygen incorporation during intrinsic ZnO sputtering on the performance of Cu(In,Ga)Se2 thin film solar cells

Kkotnim Lee; Eun A. Ok; Jong Keuk Park; Won Mok Kim; Young Joon Baik; Donghwan Kim; Jeung Hyun Jeong

doi:10.1063/1.4894214

The impact of oxygen incorporation during intrinsic ZnO sputtering on the performance of Cu(In,Ga)Se₂ thin film solar cells

Kkotnim Lee
, Eun A. Ok
, Jong Keuk Park
, Won Mok Kim
, Young Joon Baik
, Donghwan Kim
, Jeung Hyun Jeong^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We investigated the impact of incorporating 2% oxygen during intrinsic ZnO sputtering on the efficiency of Cu(In,Ga)Se₂ solar cells. The added oxygen not only reduced the optical absorption loss of the Al-doped ZnO overlaying layer but also improved the electronic properties of the underlying CdS/Cu(In,Ga)Se₂ by increasing carrier density, lowering defect level, and increasing diffusion length, eventually enhancing J_SC, V_OC, and fill factor. It was found that the Na doping concentration was significantly increased around the CdS/Cu(In,Ga)Se₂ junction due to the plasma-activated oxygen. The improved electronic properties are better explained by the increased Na concentration than simply the oxygen-related defect passivation.

Original language	English
Article number	083906
Journal	Applied Physics Letters
Volume	105
Issue number	8
DOIs	https://doi.org/10.1063/1.4894214
Publication status	Published - 2014 Aug 25

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "The impact of oxygen incorporation during intrinsic ZnO sputtering on the performance of Cu(In,Ga)Se2 thin film solar cells",

abstract = "We investigated the impact of incorporating 2\% oxygen during intrinsic ZnO sputtering on the efficiency of Cu(In,Ga)Se2 solar cells. The added oxygen not only reduced the optical absorption loss of the Al-doped ZnO overlaying layer but also improved the electronic properties of the underlying CdS/Cu(In,Ga)Se2 by increasing carrier density, lowering defect level, and increasing diffusion length, eventually enhancing JSC, VOC, and fill factor. It was found that the Na doping concentration was significantly increased around the CdS/Cu(In,Ga)Se2 junction due to the plasma-activated oxygen. The improved electronic properties are better explained by the increased Na concentration than simply the oxygen-related defect passivation.",

author = "Kkotnim Lee and Ok, \{Eun A.\} and Park, \{Jong Keuk\} and Kim, \{Won Mok\} and Baik, \{Young Joon\} and Donghwan Kim and Jeong, \{Jeung Hyun\}",

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T1 - The impact of oxygen incorporation during intrinsic ZnO sputtering on the performance of Cu(In,Ga)Se2 thin film solar cells

AU - Lee, Kkotnim

AU - Ok, Eun A.

AU - Park, Jong Keuk

AU - Kim, Won Mok

AU - Baik, Young Joon

AU - Kim, Donghwan

AU - Jeong, Jeung Hyun

PY - 2014/8/25

Y1 - 2014/8/25

N2 - We investigated the impact of incorporating 2% oxygen during intrinsic ZnO sputtering on the efficiency of Cu(In,Ga)Se2 solar cells. The added oxygen not only reduced the optical absorption loss of the Al-doped ZnO overlaying layer but also improved the electronic properties of the underlying CdS/Cu(In,Ga)Se2 by increasing carrier density, lowering defect level, and increasing diffusion length, eventually enhancing JSC, VOC, and fill factor. It was found that the Na doping concentration was significantly increased around the CdS/Cu(In,Ga)Se2 junction due to the plasma-activated oxygen. The improved electronic properties are better explained by the increased Na concentration than simply the oxygen-related defect passivation.

AB - We investigated the impact of incorporating 2% oxygen during intrinsic ZnO sputtering on the efficiency of Cu(In,Ga)Se2 solar cells. The added oxygen not only reduced the optical absorption loss of the Al-doped ZnO overlaying layer but also improved the electronic properties of the underlying CdS/Cu(In,Ga)Se2 by increasing carrier density, lowering defect level, and increasing diffusion length, eventually enhancing JSC, VOC, and fill factor. It was found that the Na doping concentration was significantly increased around the CdS/Cu(In,Ga)Se2 junction due to the plasma-activated oxygen. The improved electronic properties are better explained by the increased Na concentration than simply the oxygen-related defect passivation.

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DO - 10.1063/1.4894214

M3 - Article

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SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 083906

ER -

The impact of oxygen incorporation during intrinsic ZnO sputtering on the performance of Cu(In,Ga)Se₂ thin film solar cells

Abstract

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