The influence of aluminum composition of AlxGa1-xAs in distributed Bragg reflector on surface morphology

B. Kim; M. Yoon; S. Kim; J. Son; B. Kim; J. Jhin; Dong Jin Byun

doi:10.1002/pssb.200405069

The influence of aluminum composition of Al_xGa_1-xAs in distributed Bragg reflector on surface morphology

B. Kim, M. Yoon, S. Kim, J. Son, B. Kim, J. Jhin, Dong Jin Byun

Research output: Contribution to journal › Article › peer-review

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Abstract

Surface morphology of the AlGaAs/GaAs Vertical Cavity Surface Emitting Laser (VCSEL) grown by metalorganic vapor phase epitaxy (MOVPE) was investigated using atomic force microscopy. It is shown that the morphology of the structure strongly depends on the aluminum composition of the low Al content layer of distributed Bragg reflector (DBR) pairs and epi thickness. Whereas a high Al content layer in DBRs had little effect on the surface morphology, it was attributed that the influence of Al composition on the morphology of Al _xGa_1-xAs on GaAs was stronger in the range of 0 < x < 0.5 than 0.5 < x < 1.

Original language	English
Pages (from-to)	2726-2729
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	241
Issue number	12
DOIs	https://doi.org/10.1002/pssb.200405069
Publication status	Published - 2004 Oct 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "The influence of aluminum composition of AlxGa1-xAs in distributed Bragg reflector on surface morphology",

abstract = "Surface morphology of the AlGaAs/GaAs Vertical Cavity Surface Emitting Laser (VCSEL) grown by metalorganic vapor phase epitaxy (MOVPE) was investigated using atomic force microscopy. It is shown that the morphology of the structure strongly depends on the aluminum composition of the low Al content layer of distributed Bragg reflector (DBR) pairs and epi thickness. Whereas a high Al content layer in DBRs had little effect on the surface morphology, it was attributed that the influence of Al composition on the morphology of Al xGa1-xAs on GaAs was stronger in the range of 0 < x < 0.5 than 0.5 < x < 1.",

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AU - Kim, B.

AU - Yoon, M.

AU - Kim, S.

AU - Son, J.

AU - Kim, B.

AU - Jhin, J.

AU - Byun, Dong Jin

PY - 2004/10/1

Y1 - 2004/10/1

N2 - Surface morphology of the AlGaAs/GaAs Vertical Cavity Surface Emitting Laser (VCSEL) grown by metalorganic vapor phase epitaxy (MOVPE) was investigated using atomic force microscopy. It is shown that the morphology of the structure strongly depends on the aluminum composition of the low Al content layer of distributed Bragg reflector (DBR) pairs and epi thickness. Whereas a high Al content layer in DBRs had little effect on the surface morphology, it was attributed that the influence of Al composition on the morphology of Al xGa1-xAs on GaAs was stronger in the range of 0 < x < 0.5 than 0.5 < x < 1.

AB - Surface morphology of the AlGaAs/GaAs Vertical Cavity Surface Emitting Laser (VCSEL) grown by metalorganic vapor phase epitaxy (MOVPE) was investigated using atomic force microscopy. It is shown that the morphology of the structure strongly depends on the aluminum composition of the low Al content layer of distributed Bragg reflector (DBR) pairs and epi thickness. Whereas a high Al content layer in DBRs had little effect on the surface morphology, it was attributed that the influence of Al composition on the morphology of Al xGa1-xAs on GaAs was stronger in the range of 0 < x < 0.5 than 0.5 < x < 1.

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The influence of aluminum composition of Al_xGa_1-xAs in distributed Bragg reflector on surface morphology

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