The island-gate varactor - A high-Q MOS varactor for millimeter-wave applications

Yongho Oh, Sooyeon Kim, Seungyong Lee, Jae Sung Rieh

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


A new accumulation MOS varactor with island-shaped poly gate layout is proposed to improve the quality factor (Q-factor) at high frequency, which can be readily employed for CMOS-based millimeter-wave applications. Measured results up to 67 GHz show significant improvements in the Q-factor and the series resistance Rs over the conventional multi-finger MOS varactors with the same ground rule and gate area. The proposed island-gate MOS varactor is expected to improve the overall Q-factor of the LC tank of millimeter-wave oscillators.

Original languageEnglish
Article number4804622
Pages (from-to)215-217
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number4
Publication statusPublished - 2009 Apr


  • Millimeter-wave
  • Q-factor
  • Varactors

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'The island-gate varactor - A high-Q MOS varactor for millimeter-wave applications'. Together they form a unique fingerprint.

Cite this