The Mechanism of Schottky Barrier Modulation of Tantalum Nitride/Ge Contacts

Yujin Seo; Sukwon Lee; Seung Heon Chris Baek; Wan Sik Hwang; Hyun Yong Yu; Seok Hee Lee; Byung Jin Cho

doi:10.1109/LED.2015.2470535

The Mechanism of Schottky Barrier Modulation of Tantalum Nitride/Ge Contacts

Yujin Seo, Sukwon Lee, Seung Heon Chris Baek, Wan Sik Hwang, Hyun Yong Yu, Seok Hee Lee, Byung Jin Cho

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

In this letter, we discuss the mechanism of Schottky barrier height (SBH) modulation of the TaN/Ge contact by varying the nitrogen concentration in the TaN. The Fermi level, which is strongly pinned near the valence band edge of Ge, moves to the conduction band edge of Ge with higher nitrogen concentration in the reactive sputtered TaN. This SBH modulation is attributed to the presence of an electric dipole induced by Ge-N bonds at the interface of the TaN/Ge contact. This SBH modulation due to the semiconductor-nitrogen bonds at the interface is not specific to TaN/Ge, but rather is a general feature in various transition-metal nitride systems on various semiconductors.

Original language	English
Article number	7214232
Pages (from-to)	997-1000
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	36
Issue number	10
DOIs	https://doi.org/10.1109/LED.2015.2470535
Publication status	Published - 2015 Oct

Bibliographical note

Funding Information:
This work was supported by the Korea Evaluation Institute of Industrial Technology within the Technology Innovation Program through the Ministry of Trade, Industry and Energy, Korea, under Grant 10048594. The review of this letter was arranged by Editor J. Cai.

Publisher Copyright:
© 2015 IEEE.

Keywords

Fermi level de-pinning
Germanium
Schottky barrier height
tantalum nitride

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2015.2470535

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title = "The Mechanism of Schottky Barrier Modulation of Tantalum Nitride/Ge Contacts",

abstract = "In this letter, we discuss the mechanism of Schottky barrier height (SBH) modulation of the TaN/Ge contact by varying the nitrogen concentration in the TaN. The Fermi level, which is strongly pinned near the valence band edge of Ge, moves to the conduction band edge of Ge with higher nitrogen concentration in the reactive sputtered TaN. This SBH modulation is attributed to the presence of an electric dipole induced by Ge-N bonds at the interface of the TaN/Ge contact. This SBH modulation due to the semiconductor-nitrogen bonds at the interface is not specific to TaN/Ge, but rather is a general feature in various transition-metal nitride systems on various semiconductors.",

keywords = "Fermi level de-pinning, Germanium, Schottky barrier height, tantalum nitride",

author = "Yujin Seo and Sukwon Lee and Baek, {Seung Heon Chris} and Hwang, {Wan Sik} and Yu, {Hyun Yong} and Lee, {Seok Hee} and Cho, {Byung Jin}",

note = "Funding Information: This work was supported by the Korea Evaluation Institute of Industrial Technology within the Technology Innovation Program through the Ministry of Trade, Industry and Energy, Korea, under Grant 10048594. The review of this letter was arranged by Editor J. Cai. Publisher Copyright: {\textcopyright} 2015 IEEE.",

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AU - Seo, Yujin

AU - Lee, Sukwon

AU - Baek, Seung Heon Chris

AU - Hwang, Wan Sik

AU - Yu, Hyun Yong

AU - Lee, Seok Hee

AU - Cho, Byung Jin

N1 - Funding Information: This work was supported by the Korea Evaluation Institute of Industrial Technology within the Technology Innovation Program through the Ministry of Trade, Industry and Energy, Korea, under Grant 10048594. The review of this letter was arranged by Editor J. Cai. Publisher Copyright: © 2015 IEEE.

PY - 2015/10

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N2 - In this letter, we discuss the mechanism of Schottky barrier height (SBH) modulation of the TaN/Ge contact by varying the nitrogen concentration in the TaN. The Fermi level, which is strongly pinned near the valence band edge of Ge, moves to the conduction band edge of Ge with higher nitrogen concentration in the reactive sputtered TaN. This SBH modulation is attributed to the presence of an electric dipole induced by Ge-N bonds at the interface of the TaN/Ge contact. This SBH modulation due to the semiconductor-nitrogen bonds at the interface is not specific to TaN/Ge, but rather is a general feature in various transition-metal nitride systems on various semiconductors.

AB - In this letter, we discuss the mechanism of Schottky barrier height (SBH) modulation of the TaN/Ge contact by varying the nitrogen concentration in the TaN. The Fermi level, which is strongly pinned near the valence band edge of Ge, moves to the conduction band edge of Ge with higher nitrogen concentration in the reactive sputtered TaN. This SBH modulation is attributed to the presence of an electric dipole induced by Ge-N bonds at the interface of the TaN/Ge contact. This SBH modulation due to the semiconductor-nitrogen bonds at the interface is not specific to TaN/Ge, but rather is a general feature in various transition-metal nitride systems on various semiconductors.

KW - Fermi level de-pinning

KW - Germanium

KW - Schottky barrier height

KW - tantalum nitride

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The Mechanism of Schottky Barrier Modulation of Tantalum Nitride/Ge Contacts

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Bibliographical note

Keywords

ASJC Scopus subject areas

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