The response characteristics of a gas sensor based on poly-3-hexylithiophene thin-film transistors

Jin Wook Jeong; Yang Doo Lee; Young Min Kim; Young Wook Park; Jin Hwan Choi; Tae Hyun Park; Choi Dong Soo; Song Myung Won; Il Ki Han; Byeong Kwon Ju

doi:10.1016/j.snb.2010.02.019

The response characteristics of a gas sensor based on poly-3-hexylithiophene thin-film transistors

Jin Wook Jeong, Yang Doo Lee, Young Min Kim, Young Wook Park, Jin Hwan Choi, Tae Hyun Park, Choi Dong Soo, Song Myung Won, Il Ki Han, Byeong Kwon Ju

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

85 Citations (Scopus)

Abstract

This paper studies the response characteristics of a gas sensor for organic thin-film transistors (OTFTs), made from spin-coated poly-3-hexylthiophene (P3HT) on a thermally grown SiO₂/Si wafer. The gas response characteristics of OTFT sensors are observed from the change in the drain-source current, as a function of time, when the P3HT-based OTFT sensors of different channel widths are exposed to cycles of exposure to and the evacuation of NH₃ gas, with concentration ranging from 10 to 100 ppm at room temperature in normal atmosphere. The measured drain-source current decreases rapidly with time after exposure to NH₃ gas and the response characteristics of the drain-source current are seen to be higher for larger values of NH₃ gas concentration. Also, the response characteristics of the OTFT sensor show that there is a shift in the threshold-voltage as well as a change in mobility after exposure to NH₃ gas.

Original language	English
Pages (from-to)	40-45
Number of pages	6
Journal	Sensors and Actuators, B: Chemical
Volume	146
Issue number	1
DOIs	https://doi.org/10.1016/j.snb.2010.02.019
Publication status	Published - 2010 Apr 8

Keywords

Gas sensor
NH sensor
Organic semiconductor
Organic thin-film transistor
Poly-3-hexylthiophene

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.snb.2010.02.019

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title = "The response characteristics of a gas sensor based on poly-3-hexylithiophene thin-film transistors",

abstract = "This paper studies the response characteristics of a gas sensor for organic thin-film transistors (OTFTs), made from spin-coated poly-3-hexylthiophene (P3HT) on a thermally grown SiO2/Si wafer. The gas response characteristics of OTFT sensors are observed from the change in the drain-source current, as a function of time, when the P3HT-based OTFT sensors of different channel widths are exposed to cycles of exposure to and the evacuation of NH3 gas, with concentration ranging from 10 to 100 ppm at room temperature in normal atmosphere. The measured drain-source current decreases rapidly with time after exposure to NH3 gas and the response characteristics of the drain-source current are seen to be higher for larger values of NH3 gas concentration. Also, the response characteristics of the OTFT sensor show that there is a shift in the threshold-voltage as well as a change in mobility after exposure to NH3 gas.",

keywords = "Gas sensor, NH sensor, Organic semiconductor, Organic thin-film transistor, Poly-3-hexylthiophene",

author = "Jeong, {Jin Wook} and Lee, {Yang Doo} and Kim, {Young Min} and Park, {Young Wook} and Choi, {Jin Hwan} and Park, {Tae Hyun} and Soo, {Choi Dong} and Won, {Song Myung} and Han, {Il Ki} and Ju, {Byeong Kwon}",

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AU - Jeong, Jin Wook

AU - Lee, Yang Doo

AU - Kim, Young Min

AU - Park, Young Wook

AU - Choi, Jin Hwan

AU - Park, Tae Hyun

AU - Soo, Choi Dong

AU - Won, Song Myung

AU - Han, Il Ki

AU - Ju, Byeong Kwon

PY - 2010/4/8

Y1 - 2010/4/8

N2 - This paper studies the response characteristics of a gas sensor for organic thin-film transistors (OTFTs), made from spin-coated poly-3-hexylthiophene (P3HT) on a thermally grown SiO2/Si wafer. The gas response characteristics of OTFT sensors are observed from the change in the drain-source current, as a function of time, when the P3HT-based OTFT sensors of different channel widths are exposed to cycles of exposure to and the evacuation of NH3 gas, with concentration ranging from 10 to 100 ppm at room temperature in normal atmosphere. The measured drain-source current decreases rapidly with time after exposure to NH3 gas and the response characteristics of the drain-source current are seen to be higher for larger values of NH3 gas concentration. Also, the response characteristics of the OTFT sensor show that there is a shift in the threshold-voltage as well as a change in mobility after exposure to NH3 gas.

AB - This paper studies the response characteristics of a gas sensor for organic thin-film transistors (OTFTs), made from spin-coated poly-3-hexylthiophene (P3HT) on a thermally grown SiO2/Si wafer. The gas response characteristics of OTFT sensors are observed from the change in the drain-source current, as a function of time, when the P3HT-based OTFT sensors of different channel widths are exposed to cycles of exposure to and the evacuation of NH3 gas, with concentration ranging from 10 to 100 ppm at room temperature in normal atmosphere. The measured drain-source current decreases rapidly with time after exposure to NH3 gas and the response characteristics of the drain-source current are seen to be higher for larger values of NH3 gas concentration. Also, the response characteristics of the OTFT sensor show that there is a shift in the threshold-voltage as well as a change in mobility after exposure to NH3 gas.

KW - Gas sensor

KW - NH sensor

KW - Organic semiconductor

KW - Organic thin-film transistor

KW - Poly-3-hexylthiophene

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The response characteristics of a gas sensor based on poly-3-hexylithiophene thin-film transistors

Abstract

Keywords

ASJC Scopus subject areas

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