The revolution in SiGe: Impact on device electronics

D. L. Harame; S. J. Koester; G. Freeman; P. Cottrel; K. Rim; G. Dehlinger; D. Ahlgren; J. S. Dunn; D. Greenberg; A. Joseph; F. Anderson; J. S. Rieh; S. A.S.T. Onge; D. Coolbaugh; V. Ramachandran; J. D. Cressler; S. Subbanna

doi:10.1016/j.apsusc.2003.08.086

The revolution in SiGe: Impact on device electronics

D. L. Harame, S. J. Koester, G. Freeman, P. Cottrel, K. Rim, G. Dehlinger, D. Ahlgren, J. S. Dunn, D. Greenberg, A. Joseph, F. Anderson, J. S. Rieh, S. A.S.T. Onge, D. Coolbaugh, V. Ramachandran, J. D. Cressler, S. Subbanna

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

SiGe is having a major impact in device electronics. The most mature application is the SiGe BiCMOS technology which is in production throughout the world. The areas of most rapid growth are in CMOS where SiGe is being considered for a wide variety of elements including raised S/D, poly-SiGe Gates, in buffer layers to create a tensile strained Si layer, and as the conducting channel in MODFETs.

Original language	English
Pages (from-to)	9-17
Number of pages	9
Journal	Applied Surface Science
Volume	224
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2003.08.086
Publication status	Published - 2004 Mar 15
Externally published	Yes

Keywords

Device scaling
SiGe
SiGe BiCMOS
SiGe HBT

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces, Coatings and Films
Surfaces and Interfaces

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10.1016/j.apsusc.2003.08.086

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Harame, D. L., Koester, S. J., Freeman, G., Cottrel, P., Rim, K., Dehlinger, G., Ahlgren, D., Dunn, J. S., Greenberg, D., Joseph, A., Anderson, F., Rieh, J. S., Onge, S. A. S. T., Coolbaugh, D., Ramachandran, V., Cressler, J. D., & Subbanna, S. (2004). The revolution in SiGe: Impact on device electronics. Applied Surface Science, 224(1-4), 9-17. https://doi.org/10.1016/j.apsusc.2003.08.086

Harame, DL, Koester, SJ, Freeman, G, Cottrel, P, Rim, K, Dehlinger, G, Ahlgren, D, Dunn, JS, Greenberg, D, Joseph, A, Anderson, F, Rieh, JS, Onge, SAST, Coolbaugh, D, Ramachandran, V, Cressler, JD & Subbanna, S 2004, 'The revolution in SiGe: Impact on device electronics', Applied Surface Science, vol. 224, no. 1-4, pp. 9-17. https://doi.org/10.1016/j.apsusc.2003.08.086

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AU - Koester, S. J.

AU - Freeman, G.

AU - Cottrel, P.

AU - Rim, K.

AU - Dehlinger, G.

AU - Ahlgren, D.

AU - Dunn, J. S.

AU - Greenberg, D.

AU - Joseph, A.

AU - Anderson, F.

AU - Rieh, J. S.

AU - Onge, S. A.S.T.

AU - Coolbaugh, D.

AU - Ramachandran, V.

AU - Cressler, J. D.

AU - Subbanna, S.

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The revolution in SiGe: Impact on device electronics

Abstract

Keywords

ASJC Scopus subject areas

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