The revolution in SiGe: Impact on device electronics

D. L. Harame, S. J. Koester, G. Freeman, P. Cottrel, K. Rim, G. Dehlinger, D. Ahlgren, J. S. Dunn, D. Greenberg, A. Joseph, F. Anderson, J. S. Rieh, S. A.S.T. Onge, D. Coolbaugh, V. Ramachandran, J. D. Cressler, S. Subbanna

Research output: Contribution to journalArticlepeer-review

52 Citations (Scopus)


SiGe is having a major impact in device electronics. The most mature application is the SiGe BiCMOS technology which is in production throughout the world. The areas of most rapid growth are in CMOS where SiGe is being considered for a wide variety of elements including raised S/D, poly-SiGe Gates, in buffer layers to create a tensile strained Si layer, and as the conducting channel in MODFETs.

Original languageEnglish
Pages (from-to)9-17
Number of pages9
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - 2004 Mar 15
Externally publishedYes


  • Device scaling
  • SiGe
  • SiGe BiCMOS
  • SiGe HBT

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces


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