The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS

B. Luo; R. M. Mehandru; Jihyun Kim; F. Ren; B. P. Gila; A. H. Onstine; C. R. Abernathy; S. J. Pearton; R. C. Fitch; J. Gillespie; R. Dellmer; T. Jenkins; J. Sewell; D. Via; A. Crespo

doi:10.1016/S0038-1101(02)00229-0

The role of cleaning conditions and epitaxial layer structure on reliability of Sc₂O₃ and MgO passivation on AlGaN/GaN HEMTS

B. Luo, R. M. Mehandru, Jihyun Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, R. C. Fitch, J. Gillespie, R. Dellmer, T. Jenkins, J. Sewell, D. Via, A. Crespo

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The effect of layer structure (GaN versus AlGaN cap) and cleaning procedure prior to Sc₂O₃ or MgO deposition at 100 °C were examined for their effects on the long-term bias-stress stability of AlGaN/GaN high electron mobility transistors (HEMTs). Surface cleaning by itself was not sufficient to prevent current collapse in the devices. The forward and reverse gate leakage currents were decreased under most conditions upon deposition of the oxide passivation layers. After ≈13 h of bias-stressing, the MgO-passivated HEMTs retain ≥90% their initial drain-source current. The Sc₂O₃-passivated devices retained ≈80% recovery of the current under the same conditions.

Original language	English
Pages (from-to)	2185-2190
Number of pages	6
Journal	Solid-State Electronics
Volume	46
Issue number	12
DOIs	https://doi.org/10.1016/S0038-1101(02)00229-0
Publication status	Published - 2002 Dec
Externally published	Yes

Bibliographical note

Funding Information:
The work at UF was partially supported by ONR (H.B. Dietrich, N00014-1-02-04) and NSF (CTS 9901173).

Keywords

Bias-Stressing test
Current dispersion
GaN HEMT
Gate lag measurement
Oxide passivation film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/S0038-1101(02)00229-0

Cite this

Luo, B., Mehandru, R. M., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Fitch, R. C., Gillespie, J., Dellmer, R., Jenkins, T., Sewell, J., Via, D., & Crespo, A. (2002). The role of cleaning conditions and epitaxial layer structure on reliability of Sc₂O₃ and MgO passivation on AlGaN/GaN HEMTS. Solid-State Electronics, 46(12), 2185-2190. https://doi.org/10.1016/S0038-1101(02)00229-0

Luo, B, Mehandru, RM, Kim, J, Ren, F, Gila, BP, Onstine, AH, Abernathy, CR, Pearton, SJ, Fitch, RC, Gillespie, J, Dellmer, R, Jenkins, T, Sewell, J, Via, D & Crespo, A 2002, 'The role of cleaning conditions and epitaxial layer structure on reliability of Sc₂O₃ and MgO passivation on AlGaN/GaN HEMTS', Solid-State Electronics, vol. 46, no. 12, pp. 2185-2190. https://doi.org/10.1016/S0038-1101(02)00229-0

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title = "The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS",

abstract = "The effect of layer structure (GaN versus AlGaN cap) and cleaning procedure prior to Sc2O3 or MgO deposition at 100 °C were examined for their effects on the long-term bias-stress stability of AlGaN/GaN high electron mobility transistors (HEMTs). Surface cleaning by itself was not sufficient to prevent current collapse in the devices. The forward and reverse gate leakage currents were decreased under most conditions upon deposition of the oxide passivation layers. After ≈13 h of bias-stressing, the MgO-passivated HEMTs retain ≥90% their initial drain-source current. The Sc2O3-passivated devices retained ≈80% recovery of the current under the same conditions.",

keywords = "Bias-Stressing test, Current dispersion, GaN HEMT, Gate lag measurement, Oxide passivation film",

author = "B. Luo and Mehandru, {R. M.} and Jihyun Kim and F. Ren and Gila, {B. P.} and Onstine, {A. H.} and Abernathy, {C. R.} and Pearton, {S. J.} and Fitch, {R. C.} and J. Gillespie and R. Dellmer and T. Jenkins and J. Sewell and D. Via and A. Crespo",

note = "Funding Information: The work at UF was partially supported by ONR (H.B. Dietrich, N00014-1-02-04) and NSF (CTS 9901173).",

year = "2002",

month = dec,

doi = "10.1016/S0038-1101(02)00229-0",

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T1 - The role of cleaning conditions and epitaxial layer structure on reliability of Sc2O3 and MgO passivation on AlGaN/GaN HEMTS

AU - Luo, B.

AU - Mehandru, R. M.

AU - Kim, Jihyun

AU - Ren, F.

AU - Gila, B. P.

AU - Onstine, A. H.

AU - Abernathy, C. R.

AU - Pearton, S. J.

AU - Fitch, R. C.

AU - Gillespie, J.

AU - Dellmer, R.

AU - Jenkins, T.

AU - Sewell, J.

AU - Via, D.

AU - Crespo, A.

N1 - Funding Information: The work at UF was partially supported by ONR (H.B. Dietrich, N00014-1-02-04) and NSF (CTS 9901173).

PY - 2002/12

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N2 - The effect of layer structure (GaN versus AlGaN cap) and cleaning procedure prior to Sc2O3 or MgO deposition at 100 °C were examined for their effects on the long-term bias-stress stability of AlGaN/GaN high electron mobility transistors (HEMTs). Surface cleaning by itself was not sufficient to prevent current collapse in the devices. The forward and reverse gate leakage currents were decreased under most conditions upon deposition of the oxide passivation layers. After ≈13 h of bias-stressing, the MgO-passivated HEMTs retain ≥90% their initial drain-source current. The Sc2O3-passivated devices retained ≈80% recovery of the current under the same conditions.

AB - The effect of layer structure (GaN versus AlGaN cap) and cleaning procedure prior to Sc2O3 or MgO deposition at 100 °C were examined for their effects on the long-term bias-stress stability of AlGaN/GaN high electron mobility transistors (HEMTs). Surface cleaning by itself was not sufficient to prevent current collapse in the devices. The forward and reverse gate leakage currents were decreased under most conditions upon deposition of the oxide passivation layers. After ≈13 h of bias-stressing, the MgO-passivated HEMTs retain ≥90% their initial drain-source current. The Sc2O3-passivated devices retained ≈80% recovery of the current under the same conditions.

KW - Bias-Stressing test

KW - Current dispersion

KW - GaN HEMT

KW - Gate lag measurement

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