The selective growth of carbon nanotubes on hole-pattern by thermal chemical vapor deposition

Yoon Huh; Jeong Yong Lee; Tae Jae Lee; Seung Chul Lyu; Cheol Jin Lee

The selective growth of carbon nanotubes on hole-pattern by thermal chemical vapor deposition

Yoon Huh, Jeong Yong Lee, Tae Jae Lee, Seung Chul Lyu, Cheol Jin Lee

Research output: Contribution to journal › Conference article › peer-review

Abstract

Hole patterns were fabricated on SiO₂/Si substrate by a conventional lithography method using photo-resist, and iron was deposited on a substrate by RF sputtering. We have synthesized vertically-aligned carbon nanotubes which were selectively grown on the iron-deposited hole patterns by thermal chemical vapor deposition of C₂H₂ gas at 750 ∼ 850 °C. The carbon nanotubes selectively grown on hole patterns are applicable to a field emission display of triode type. We confirmed the growth of the carbon nanotubes using scanning electron microscopy.

Original language	English
Pages (from-to)	S732-S734
Journal	Journal of the Korean Physical Society
Volume	42
Issue number	SPEC.
Publication status	Published - 2003 Feb
Externally published	Yes
Event	Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 - Cheju Island, Korea, Republic of Duration: 2002 Aug 20 → 2002 Aug 23

Keywords

Carbon nanotube
Field emission
Hole pattern
Thermal CVD

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

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title = "The selective growth of carbon nanotubes on hole-pattern by thermal chemical vapor deposition",

abstract = "Hole patterns were fabricated on SiO2/Si substrate by a conventional lithography method using photo-resist, and iron was deposited on a substrate by RF sputtering. We have synthesized vertically-aligned carbon nanotubes which were selectively grown on the iron-deposited hole patterns by thermal chemical vapor deposition of C2H2 gas at 750 ∼ 850 °C. The carbon nanotubes selectively grown on hole patterns are applicable to a field emission display of triode type. We confirmed the growth of the carbon nanotubes using scanning electron microscopy.",

keywords = "Carbon nanotube, Field emission, Hole pattern, Thermal CVD",

author = "Yoon Huh and Lee, {Jeong Yong} and Lee, {Tae Jae} and Lyu, {Seung Chul} and Lee, {Cheol Jin}",

year = "2003",

month = feb,

language = "English",

volume = "42",

pages = "S732--S734",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SPEC.",

note = "Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002 ; Conference date: 20-08-2002 Through 23-08-2002",

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TY - JOUR

T1 - The selective growth of carbon nanotubes on hole-pattern by thermal chemical vapor deposition

AU - Huh, Yoon

AU - Lee, Jeong Yong

AU - Lee, Tae Jae

AU - Lyu, Seung Chul

AU - Lee, Cheol Jin

PY - 2003/2

Y1 - 2003/2

N2 - Hole patterns were fabricated on SiO2/Si substrate by a conventional lithography method using photo-resist, and iron was deposited on a substrate by RF sputtering. We have synthesized vertically-aligned carbon nanotubes which were selectively grown on the iron-deposited hole patterns by thermal chemical vapor deposition of C2H2 gas at 750 ∼ 850 °C. The carbon nanotubes selectively grown on hole patterns are applicable to a field emission display of triode type. We confirmed the growth of the carbon nanotubes using scanning electron microscopy.

AB - Hole patterns were fabricated on SiO2/Si substrate by a conventional lithography method using photo-resist, and iron was deposited on a substrate by RF sputtering. We have synthesized vertically-aligned carbon nanotubes which were selectively grown on the iron-deposited hole patterns by thermal chemical vapor deposition of C2H2 gas at 750 ∼ 850 °C. The carbon nanotubes selectively grown on hole patterns are applicable to a field emission display of triode type. We confirmed the growth of the carbon nanotubes using scanning electron microscopy.

KW - Carbon nanotube

KW - Field emission

KW - Hole pattern

KW - Thermal CVD

UR - http://www.scopus.com/inward/record.url?scp=0037305642&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037305642&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0037305642

SN - 0374-4884

VL - 42

SP - S732-S734

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SPEC.

T2 - Proceedings of The 11th Seoul International Symposium on the Physics of Semiconductors and Apllications - 2002

Y2 - 20 August 2002 through 23 August 2002

ER -

The selective growth of carbon nanotubes on hole-pattern by thermal chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

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