The silicon Schottky diode on flexible substrates by transfer method

Tae Yeon Oh, Shin Woo Jeong, Seongpil Chang, Kookhyun Choi, Hyun Jun Ha, Byeong Kwon Ju

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


A flexible silicon barrier diode was fabricated by the transfer printing method. Micro-line patterned p-type single crystalline silicon membranes were created from a silicon on insulator wafer. The dark current of our device was very low, about 1 pA for reverse bias voltages up to 5 V, and showed rectifying behavior with an ideality factor of 1.05. The photo-response and the responsivity was 32 and 0.3 A/W, respectively, for light intensity of 1.2 mW/cm2. Also, the current of the photodetector changed under compressive stress or tensile stress. Our device is functional as the piezotronic sensor as well as the photodetector.

Original languageEnglish
Article number021106
JournalApplied Physics Letters
Issue number2
Publication statusPublished - 2013 Jan 14

Bibliographical note

Funding Information:
This work was supported by the IT R&D Program (Grant No. 2008-F-024-02, Development of Mobile Flexible (Input/Output Platform) of MKE in Korea, and the Industrial-Educational Cooperation Program between Korea University and Samsung Electronics.

Copyright 2013 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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