A flexible silicon barrier diode was fabricated by the transfer printing method. Micro-line patterned p-type single crystalline silicon membranes were created from a silicon on insulator wafer. The dark current of our device was very low, about 1 pA for reverse bias voltages up to 5 V, and showed rectifying behavior with an ideality factor of 1.05. The photo-response and the responsivity was 32 and 0.3 A/W, respectively, for light intensity of 1.2 mW/cm2. Also, the current of the photodetector changed under compressive stress or tensile stress. Our device is functional as the piezotronic sensor as well as the photodetector.
Bibliographical noteFunding Information:
This work was supported by the IT R&D Program (Grant No. 2008-F-024-02, Development of Mobile Flexible (Input/Output Platform) of MKE in Korea, and the Industrial-Educational Cooperation Program between Korea University and Samsung Electronics.
Copyright 2013 Elsevier B.V., All rights reserved.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)