The chemical and electronic properties of surfaces to a large extent are controlled by defects. Defects facilitate the adsorption of gases and serve as reactive sites for chemical reactions. Furthermore, surface defects are a key to the nucleation, growth, and stability of metal clusters on metal oxide surfaces. This paper summarizes recent studies to assess the role of defects on Au cluster nucleation, growth, and stability on SiO2 and mixed TiOx-SiO2 thin films. For a SiO2 thin film, Au clusters sinter at elevated temperatures and pressures; however, introduction of defects on a SiO2 surface as TiOx islands or as substitutional Ti dramatically decreases the rate of Au cluster sintering.
Bibliographical noteFunding Information:
We acknowledge with pleasure the support of this work by U.S. Department of Energy, Office of Basic Energy Science, Division of Chemical Sciences, U.S. Civilian Research & Development Foundation and the Texas Advanced Technology Program under Grant No. 010366-0022-2001.
ASJC Scopus subject areas
- Process Chemistry and Technology
- Physical and Theoretical Chemistry