The use of nitrogen to disorder GaInP

D. C. Chapman; L. W. Rieth; G. B. Stringfellow; J. W. Lee; T. Y. Seong

doi:10.1063/1.1715139

The use of nitrogen to disorder GaInP

D. C. Chapman, L. W. Rieth, G. B. Stringfellow, J. W. Lee, T. Y. Seong

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The use of the surfactant N in the growth of GaInP, to cause a reduction in CuPt ordering, was discussed. It was found that the reduction in order parameter was due to a change of the surface thermodynamics. A decrease in the P dimer concentration was observed by adding N to the surface. The reduction of P dimer concentration on the surface reduced the driving force for ordering and thus reduced the amount of CuPt order in GaInP. Through gas phase parasitic reactions, nitrogen also reduced the In content in the epilayer.

Original language	English
Pages (from-to)	6145-6151
Number of pages	7
Journal	Journal of Applied Physics
Volume	95
Issue number	11 I
DOIs	https://doi.org/10.1063/1.1715139
Publication status	Published - 2004 Jun 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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AU - Rieth, L. W.

AU - Stringfellow, G. B.

AU - Lee, J. W.

AU - Seong, T. Y.

PY - 2004/6/1

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AB - The use of the surfactant N in the growth of GaInP, to cause a reduction in CuPt ordering, was discussed. It was found that the reduction in order parameter was due to a change of the surface thermodynamics. A decrease in the P dimer concentration was observed by adding N to the surface. The reduction of P dimer concentration on the surface reduced the driving force for ordering and thus reduced the amount of CuPt order in GaInP. Through gas phase parasitic reactions, nitrogen also reduced the In content in the epilayer.

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The use of nitrogen to disorder GaInP

Abstract

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