Abstract
The authors report on the photo-response characteristics of flexible sensor-transistor circuits (ST-circuits) made with (poly(3-hexylethiophene)/ phenyl-C61 -butryic acid methyl ester) (P3HT/PCBM) bulk heterojunction polymer and pentacene-based organic field-effect transistors, which are stacked via poly(dimethylsiloxane) (PDMS) on the plastic substrate. The results indicate that the anode-source current is variable because of both the charge separation of the photogenerated excitons and the accumulated charges at the OFET channel layer. The light dependent photo response (ΔI/ I 0) is modulated from 0.47 to 1.9 by the gate-source voltage at the fixed anode-source voltage of the ST-circuits.
Original language | English |
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Article number | 253309 |
Journal | Applied Physics Letters |
Volume | 97 |
Issue number | 25 |
DOIs | |
Publication status | Published - 2010 Dec 20 |
Bibliographical note
Funding Information:This work was supported by the IT R&D Program (Grant No. 2008-F-024-02, Development of Mobile Flexible Input/Output Platform) of MKE in Korea, Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (No. 2009-0083126) and the International Research and Development Program of the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) of Korea (Grant No. D00048).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)