The vertically stacked organic sensor-transistor on a flexible substrate

Shin Woo Jeong; Jin Wook Jeong; Seongpil Chang; Seung Youl Kang; Kyoung Ik Cho; Byeong Kwon Ju

doi:10.1063/1.3530448

The vertically stacked organic sensor-transistor on a flexible substrate

Shin Woo Jeong, Jin Wook Jeong, Seongpil Chang, Seung Youl Kang, Kyoung Ik Cho, Byeong Kwon Ju

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The authors report on the photo-response characteristics of flexible sensor-transistor circuits (ST-circuits) made with (poly(3-hexylethiophene)/ phenyl-C₆₁ -butryic acid methyl ester) (P3HT/PCBM) bulk heterojunction polymer and pentacene-based organic field-effect transistors, which are stacked via poly(dimethylsiloxane) (PDMS) on the plastic substrate. The results indicate that the anode-source current is variable because of both the charge separation of the photogenerated excitons and the accumulated charges at the OFET channel layer. The light dependent photo response (ΔI/ I ₀) is modulated from 0.47 to 1.9 by the gate-source voltage at the fixed anode-source voltage of the ST-circuits.

Original language	English
Article number	253309
Journal	Applied Physics Letters
Volume	97
Issue number	25
DOIs	https://doi.org/10.1063/1.3530448
Publication status	Published - 2010 Dec 20

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3530448

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@article{4e3c8e716da44eabbad1ff543235c70c,

title = "The vertically stacked organic sensor-transistor on a flexible substrate",

abstract = "The authors report on the photo-response characteristics of flexible sensor-transistor circuits (ST-circuits) made with (poly(3-hexylethiophene)/ phenyl-C61 -butryic acid methyl ester) (P3HT/PCBM) bulk heterojunction polymer and pentacene-based organic field-effect transistors, which are stacked via poly(dimethylsiloxane) (PDMS) on the plastic substrate. The results indicate that the anode-source current is variable because of both the charge separation of the photogenerated excitons and the accumulated charges at the OFET channel layer. The light dependent photo response (ΔI/ I 0) is modulated from 0.47 to 1.9 by the gate-source voltage at the fixed anode-source voltage of the ST-circuits.",

author = "Jeong, {Shin Woo} and Jeong, {Jin Wook} and Seongpil Chang and Kang, {Seung Youl} and Cho, {Kyoung Ik} and Ju, {Byeong Kwon}",

note = "Funding Information: This work was supported by the IT R&D Program (Grant No. 2008-F-024-02, Development of Mobile Flexible Input/Output Platform) of MKE in Korea, Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (No. 2009-0083126) and the International Research and Development Program of the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) of Korea (Grant No. D00048).",

year = "2010",

month = dec,

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doi = "10.1063/1.3530448",

language = "English",

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journal = "Applied Physics Letters",

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T1 - The vertically stacked organic sensor-transistor on a flexible substrate

AU - Jeong, Shin Woo

AU - Jeong, Jin Wook

AU - Chang, Seongpil

AU - Kang, Seung Youl

AU - Cho, Kyoung Ik

AU - Ju, Byeong Kwon

N1 - Funding Information: This work was supported by the IT R&D Program (Grant No. 2008-F-024-02, Development of Mobile Flexible Input/Output Platform) of MKE in Korea, Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (No. 2009-0083126) and the International Research and Development Program of the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (MEST) of Korea (Grant No. D00048).

PY - 2010/12/20

Y1 - 2010/12/20

N2 - The authors report on the photo-response characteristics of flexible sensor-transistor circuits (ST-circuits) made with (poly(3-hexylethiophene)/ phenyl-C61 -butryic acid methyl ester) (P3HT/PCBM) bulk heterojunction polymer and pentacene-based organic field-effect transistors, which are stacked via poly(dimethylsiloxane) (PDMS) on the plastic substrate. The results indicate that the anode-source current is variable because of both the charge separation of the photogenerated excitons and the accumulated charges at the OFET channel layer. The light dependent photo response (ΔI/ I 0) is modulated from 0.47 to 1.9 by the gate-source voltage at the fixed anode-source voltage of the ST-circuits.

AB - The authors report on the photo-response characteristics of flexible sensor-transistor circuits (ST-circuits) made with (poly(3-hexylethiophene)/ phenyl-C61 -butryic acid methyl ester) (P3HT/PCBM) bulk heterojunction polymer and pentacene-based organic field-effect transistors, which are stacked via poly(dimethylsiloxane) (PDMS) on the plastic substrate. The results indicate that the anode-source current is variable because of both the charge separation of the photogenerated excitons and the accumulated charges at the OFET channel layer. The light dependent photo response (ΔI/ I 0) is modulated from 0.47 to 1.9 by the gate-source voltage at the fixed anode-source voltage of the ST-circuits.

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VL - 97

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The vertically stacked organic sensor-transistor on a flexible substrate

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