The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films

Jae Ho Won; Ki Hyun Kim; Jong Hee Suh; Shin Hang Cho; Pyong Kon Cho; Jin Ki Hong; Sun Ung Kim

doi:10.1016/j.nima.2008.03.057

The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films

Jae Ho Won, Ki Hyun Kim, Jong Hee Suh, Shin Hang Cho, Pyong Kon Cho, Jin Ki Hong, Sun Ung Kim

School of Health and Environmental Science

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The X-ray sensitivity is one of the important parameters indicating the detector performance. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe:Cl thick films was investigated as a function of electric field, mean photon energy, film thickness, and charge carrier transport parameters and, compared with another promising detector materials. The X-ray sensitivities of the polycrystalline CdZnTe films with 350 μm thickness were about 2.2 and 6.2 μC/cm²/R in the ohmic-type and Schottky-type detector at 0.83 V/μm, respectively.

Original language	English
Pages (from-to)	206-208
Number of pages	3
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	591
Issue number	1
DOIs	https://doi.org/10.1016/j.nima.2008.03.057
Publication status	Published - 2008 Jun 11

Keywords

Charge carrier transport
Polycrystalline CdZnTe thick films
X-ray sensitivity

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nima.2008.03.057

Cite this

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title = "The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films",

abstract = "The X-ray sensitivity is one of the important parameters indicating the detector performance. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe:Cl thick films was investigated as a function of electric field, mean photon energy, film thickness, and charge carrier transport parameters and, compared with another promising detector materials. The X-ray sensitivities of the polycrystalline CdZnTe films with 350 μm thickness were about 2.2 and 6.2 μC/cm2/R in the ohmic-type and Schottky-type detector at 0.83 V/μm, respectively.",

keywords = "Charge carrier transport, Polycrystalline CdZnTe thick films, X-ray sensitivity",

author = "Won, {Jae Ho} and Kim, {Ki Hyun} and Suh, {Jong Hee} and Cho, {Shin Hang} and Cho, {Pyong Kon} and Hong, {Jin Ki} and Kim, {Sun Ung}",

note = "Funding Information: The work was supported by the second Brain Korea 21 Program endorsed by the Korea Ministry of Education.",

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doi = "10.1016/j.nima.2008.03.057",

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T1 - The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films

AU - Won, Jae Ho

AU - Kim, Ki Hyun

AU - Suh, Jong Hee

AU - Cho, Shin Hang

AU - Cho, Pyong Kon

AU - Hong, Jin Ki

AU - Kim, Sun Ung

N1 - Funding Information: The work was supported by the second Brain Korea 21 Program endorsed by the Korea Ministry of Education.

PY - 2008/6/11

Y1 - 2008/6/11

N2 - The X-ray sensitivity is one of the important parameters indicating the detector performance. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe:Cl thick films was investigated as a function of electric field, mean photon energy, film thickness, and charge carrier transport parameters and, compared with another promising detector materials. The X-ray sensitivities of the polycrystalline CdZnTe films with 350 μm thickness were about 2.2 and 6.2 μC/cm2/R in the ohmic-type and Schottky-type detector at 0.83 V/μm, respectively.

AB - The X-ray sensitivity is one of the important parameters indicating the detector performance. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe:Cl thick films was investigated as a function of electric field, mean photon energy, film thickness, and charge carrier transport parameters and, compared with another promising detector materials. The X-ray sensitivities of the polycrystalline CdZnTe films with 350 μm thickness were about 2.2 and 6.2 μC/cm2/R in the ohmic-type and Schottky-type detector at 0.83 V/μm, respectively.

KW - Charge carrier transport

KW - Polycrystalline CdZnTe thick films

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The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films

Abstract

Keywords

ASJC Scopus subject areas

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