Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions

Jaewoo Shim, Gwangwe Yoo, Dong Ho Kang, Woo Shik Jung, Young Chul Byun, Hyoungsub Kim, Won Tae Kang, Woo Jong Yu, Hyun Yong Yu, Yongkook Park, Jin Hong Park

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


Here, we theoretically and experimentally investigate the impact of a high-κ layer inserted between graphene and p-Si in a graphene/Si junction. We have achieved 86-fold and 222-fold reductions in a specific contact resistivity (ρc) by inserting 1-nm-thick Al2O3 and 2-nm-thick TiO2 in the graphene-semiconductor junction, respectively, corresponding to lowering the effective barrier height by 0.24 and 0.12 eV. Furthermore, we propose a graphene-induced gap state model that simultaneously considers the graphene's modulation by a gate bias and the effect of the high-κ insertion.

Original languageEnglish
Article number7317745
Pages (from-to)4-7
Number of pages4
JournalIEEE Electron Device Letters
Issue number1
Publication statusPublished - 2016 Jan

Bibliographical note

Publisher Copyright:
© 2015 IEEE.


  • GS junction
  • Schottky
  • graphene
  • high-κ

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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