Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions

Jaewoo Shim; Gwangwe Yoo; Dong Ho Kang; Woo Shik Jung; Young Chul Byun; Hyoungsub Kim; Won Tae Kang; Woo Jong Yu; Hyun Yong Yu; Yongkook Park; Jin Hong Park

doi:10.1109/LED.2015.2497714

Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions

Jaewoo Shim, Gwangwe Yoo, Dong Ho Kang, Woo Shik Jung, Young Chul Byun, Hyoungsub Kim, Won Tae Kang, Woo Jong Yu, Hyun Yong Yu, Yongkook Park, Jin Hong Park

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Here, we theoretically and experimentally investigate the impact of a high-κ layer inserted between graphene and p-Si in a graphene/Si junction. We have achieved 86-fold and 222-fold reductions in a specific contact resistivity (ρ_c) by inserting 1-nm-thick Al₂O₃ and 2-nm-thick TiO₂ in the graphene-semiconductor junction, respectively, corresponding to lowering the effective barrier height by 0.24 and 0.12 eV. Furthermore, we propose a graphene-induced gap state model that simultaneously considers the graphene's modulation by a gate bias and the effect of the high-κ insertion.

Original language	English
Article number	7317745
Pages (from-to)	4-7
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	1
DOIs	https://doi.org/10.1109/LED.2015.2497714
Publication status	Published - 2016 Jan

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

GS junction
Schottky
graphene
high-κ

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2015.2497714

Cite this

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title = "Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions",

abstract = "Here, we theoretically and experimentally investigate the impact of a high-κ layer inserted between graphene and p-Si in a graphene/Si junction. We have achieved 86-fold and 222-fold reductions in a specific contact resistivity (ρc) by inserting 1-nm-thick Al2O3 and 2-nm-thick TiO2 in the graphene-semiconductor junction, respectively, corresponding to lowering the effective barrier height by 0.24 and 0.12 eV. Furthermore, we propose a graphene-induced gap state model that simultaneously considers the graphene's modulation by a gate bias and the effect of the high-κ insertion.",

keywords = "GS junction, Schottky, graphene, high-κ",

author = "Jaewoo Shim and Gwangwe Yoo and Kang, {Dong Ho} and Jung, {Woo Shik} and Byun, {Young Chul} and Hyoungsub Kim and Kang, {Won Tae} and Yu, {Woo Jong} and Yu, {Hyun Yong} and Yongkook Park and Park, {Jin Hong}",

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year = "2016",

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doi = "10.1109/LED.2015.2497714",

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AU - Shim, Jaewoo

AU - Yoo, Gwangwe

AU - Kang, Dong Ho

AU - Jung, Woo Shik

AU - Byun, Young Chul

AU - Kim, Hyoungsub

AU - Kang, Won Tae

AU - Yu, Woo Jong

AU - Yu, Hyun Yong

AU - Park, Yongkook

AU - Park, Jin Hong

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N2 - Here, we theoretically and experimentally investigate the impact of a high-κ layer inserted between graphene and p-Si in a graphene/Si junction. We have achieved 86-fold and 222-fold reductions in a specific contact resistivity (ρc) by inserting 1-nm-thick Al2O3 and 2-nm-thick TiO2 in the graphene-semiconductor junction, respectively, corresponding to lowering the effective barrier height by 0.24 and 0.12 eV. Furthermore, we propose a graphene-induced gap state model that simultaneously considers the graphene's modulation by a gate bias and the effect of the high-κ insertion.

AB - Here, we theoretically and experimentally investigate the impact of a high-κ layer inserted between graphene and p-Si in a graphene/Si junction. We have achieved 86-fold and 222-fold reductions in a specific contact resistivity (ρc) by inserting 1-nm-thick Al2O3 and 2-nm-thick TiO2 in the graphene-semiconductor junction, respectively, corresponding to lowering the effective barrier height by 0.24 and 0.12 eV. Furthermore, we propose a graphene-induced gap state model that simultaneously considers the graphene's modulation by a gate bias and the effect of the high-κ insertion.

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M3 - Article

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Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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