Abstract
Characterization of laser diode at high temperature for the issue of long-term reliability to detect and screen the initial failures originated from internal stress and optical instability is performed. Estimation of junction temperature of 1.55 μm Fabry-Perot laser diode was theoretically approached by using thermal resistance of materials regarding the heat path from analytically modeling laser diode. Under the condition of burn-in test, experiments measuring the junction temperature with current injection at controlled temperature verify the result compared to that of analysis.
| Original language | English |
|---|---|
| Pages (from-to) | 292-294 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Device and Materials Reliability |
| Volume | 4 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2004 Jun |
| Externally published | Yes |
Keywords
- Laser reliability
- Laser thermal factors
- Semiconductor device packaging
- Semiconductor lasers
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Safety, Risk, Reliability and Quality
- Electrical and Electronic Engineering