Thermal and electrical stability behavior of a magnetic tunnel junction with a new Zr-alloyed Al-oxide barrier

Chul Min Choi, Seong Rae Lee

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The thermal and electrical stability of a magnetic tunnel junction (MTJ) with a Zr-alloyed Al-oxide (ZrAl-oxide) tunnel barrier were investigated. A significant tunneling magnetic resistance (TMR) value of 10% was maintained in the MTJ with a ZrAl-oxide barrier (9.89 at.% Zr) annealed at 450°C. The break-down voltage of 1.75 V was highest for the MTJ with a 9.89 at.% Zr-alloyed Al-oxide barrier. The quality of the barrier material microstructure in the pre-oxidation state had a dominant effect on the thermal and electrical stability of the MTJ. In addition, plasma oxidation of an ultra-thin 0.6-nm-thiek ZrAl barrier led to an MTJ with 8% TMR and a junction resistance × area (RA) of 0.72 MΩμm2.

Original languageEnglish
Pages (from-to)2281-2283
Number of pages3
JournalIEEE Transactions on Magnetics
Volume40
Issue number4 II
DOIs
Publication statusPublished - 2004 Jul

Bibliographical note

Funding Information:
Manuscript received October 15, 2003. This work was supported by the Korea Ministry of Science and Technology under the National Research Laboratory Program. The authors are with the Division of Materials Science and Engineering, Korea University, Seoul 136-701, Korea (e-mail: kumetsrl@korea.ac.kr). Digital Object Identifier 10.1109/TMAG.2004.830216

Keywords

  • Amorphous Zr-alloyed Al-oxide barrier
  • Magnetic tunnel junction
  • Thermal and electrical stability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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