Abstract
The thermal and electrical stability of a magnetic tunnel junction (MTJ) with a Zr-alloyed Al-oxide (ZrAl-oxide) tunnel barrier were investigated. A significant tunneling magnetic resistance (TMR) value of 10% was maintained in the MTJ with a ZrAl-oxide barrier (9.89 at.% Zr) annealed at 450°C. The break-down voltage of 1.75 V was highest for the MTJ with a 9.89 at.% Zr-alloyed Al-oxide barrier. The quality of the barrier material microstructure in the pre-oxidation state had a dominant effect on the thermal and electrical stability of the MTJ. In addition, plasma oxidation of an ultra-thin 0.6-nm-thiek ZrAl barrier led to an MTJ with 8% TMR and a junction resistance × area (RA) of 0.72 MΩμm2.
| Original language | English |
|---|---|
| Pages (from-to) | 2281-2283 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Magnetics |
| Volume | 40 |
| Issue number | 4 II |
| DOIs | |
| Publication status | Published - 2004 Jul |
Bibliographical note
Funding Information:Manuscript received October 15, 2003. This work was supported by the Korea Ministry of Science and Technology under the National Research Laboratory Program. The authors are with the Division of Materials Science and Engineering, Korea University, Seoul 136-701, Korea (e-mail: [email protected]). Digital Object Identifier 10.1109/TMAG.2004.830216
Keywords
- Amorphous Zr-alloyed Al-oxide barrier
- Magnetic tunnel junction
- Thermal and electrical stability
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering