Abstract
The authors investigated the specularity and thermal characteristics of CoNbZr-based spin valves (SVs) with and without employing nano oxide layers (NOL). Both CoNbZr- and Ta-based SV films composed of Si-SiO2-CoNbZr (or Ta)-CoFe-NOL-CoFe-Cu-CoFe-IrMn-CoNbZr (or Ta) were prepared by rf magnetron sputtering. Magnetoresistance (MR) ratios in the as-deposited state increased 48% (3.4% → 5.0%) with incorporation of NOL. In particular, a remarkable enhancement (about 95%) in the MR ratio after annealing at 300 °C for 20 min was observed (5.0% → 9.8%). According to the auger electron spectroscopy depth profile, the large increase of the MR ratios in the initial stage of annealing were due to the double specular scattering effects by the Mn-oxides at the surface and the NOL in the free layer. Due to high affinity of Mn for oxygen, Mn diffused preferentially to the position of high oxygen potential (such as the surface or the NOL) during prolonged annealing. The authors could artificially control the diffusion direction of Mn by providing an oxygen potential (like inserting NOL) in the SV structure.
Original language | English |
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Pages (from-to) | 2824-2826 |
Number of pages | 3 |
Journal | IEEE Transactions on Magnetics |
Volume | 39 |
Issue number | 5 II |
DOIs | |
Publication status | Published - 2003 Sept |
Bibliographical note
Funding Information:Manuscript received January 6, 2003. This work was supported by in part by the Korea Ministry of Science and Technology, under the National Research Laboratory program, under Grant R01-2000-000-00234-0 from the Basic Research Program of the Korea Science and Engineering Foundation, by the Advanced Backbone Information and Telecommunication Technology Development Project, Korea Ministry of Information and Communication through Sam-sung Advanced Institute of Technology, and by the DuPont Young Faculty Program.
Keywords
- Amorphous CoNbZr spin valves
- Mn diffusion
- Nano oxide layer
- Specular scattering
- Thermal stability
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering