Thermal and Mn Diffusion Behaviors of CoNbZr-Based Spin Valves with Nano Oxide Layers

Jong Soo Kim; Young Keun Kim; Seong Rae Lee

doi:10.1109/TMAG.2003.815724

Thermal and Mn Diffusion Behaviors of CoNbZr-Based Spin Valves with Nano Oxide Layers

Jong Soo Kim, Young Keun Kim, Seong Rae Lee

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The authors investigated the specularity and thermal characteristics of CoNbZr-based spin valves (SVs) with and without employing nano oxide layers (NOL). Both CoNbZr- and Ta-based SV films composed of Si-SiO₂-CoNbZr (or Ta)-CoFe-NOL-CoFe-Cu-CoFe-IrMn-CoNbZr (or Ta) were prepared by rf magnetron sputtering. Magnetoresistance (MR) ratios in the as-deposited state increased 48% (3.4% → 5.0%) with incorporation of NOL. In particular, a remarkable enhancement (about 95%) in the MR ratio after annealing at 300 °C for 20 min was observed (5.0% → 9.8%). According to the auger electron spectroscopy depth profile, the large increase of the MR ratios in the initial stage of annealing were due to the double specular scattering effects by the Mn-oxides at the surface and the NOL in the free layer. Due to high affinity of Mn for oxygen, Mn diffused preferentially to the position of high oxygen potential (such as the surface or the NOL) during prolonged annealing. The authors could artificially control the diffusion direction of Mn by providing an oxygen potential (like inserting NOL) in the SV structure.

Original language	English
Pages (from-to)	2824-2826
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	39
Issue number	5 II
DOIs	https://doi.org/10.1109/TMAG.2003.815724
Publication status	Published - 2003 Sept

Bibliographical note

Funding Information:
Manuscript received January 6, 2003. This work was supported by in part by the Korea Ministry of Science and Technology, under the National Research Laboratory program, under Grant R01-2000-000-00234-0 from the Basic Research Program of the Korea Science and Engineering Foundation, by the Advanced Backbone Information and Telecommunication Technology Development Project, Korea Ministry of Information and Communication through Sam-sung Advanced Institute of Technology, and by the DuPont Young Faculty Program.

Keywords

Amorphous CoNbZr spin valves
Mn diffusion
Nano oxide layer
Specular scattering
Thermal stability

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2003.815724

Cite this

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title = "Thermal and Mn Diffusion Behaviors of CoNbZr-Based Spin Valves with Nano Oxide Layers",

abstract = "The authors investigated the specularity and thermal characteristics of CoNbZr-based spin valves (SVs) with and without employing nano oxide layers (NOL). Both CoNbZr- and Ta-based SV films composed of Si-SiO2-CoNbZr (or Ta)-CoFe-NOL-CoFe-Cu-CoFe-IrMn-CoNbZr (or Ta) were prepared by rf magnetron sputtering. Magnetoresistance (MR) ratios in the as-deposited state increased 48% (3.4% → 5.0%) with incorporation of NOL. In particular, a remarkable enhancement (about 95%) in the MR ratio after annealing at 300 °C for 20 min was observed (5.0% → 9.8%). According to the auger electron spectroscopy depth profile, the large increase of the MR ratios in the initial stage of annealing were due to the double specular scattering effects by the Mn-oxides at the surface and the NOL in the free layer. Due to high affinity of Mn for oxygen, Mn diffused preferentially to the position of high oxygen potential (such as the surface or the NOL) during prolonged annealing. The authors could artificially control the diffusion direction of Mn by providing an oxygen potential (like inserting NOL) in the SV structure.",

keywords = "Amorphous CoNbZr spin valves, Mn diffusion, Nano oxide layer, Specular scattering, Thermal stability",

author = "Kim, {Jong Soo} and Kim, {Young Keun} and Lee, {Seong Rae}",

note = "Funding Information: Manuscript received January 6, 2003. This work was supported by in part by the Korea Ministry of Science and Technology, under the National Research Laboratory program, under Grant R01-2000-000-00234-0 from the Basic Research Program of the Korea Science and Engineering Foundation, by the Advanced Backbone Information and Telecommunication Technology Development Project, Korea Ministry of Information and Communication through Sam-sung Advanced Institute of Technology, and by the DuPont Young Faculty Program.",

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AU - Kim, Jong Soo

AU - Kim, Young Keun

AU - Lee, Seong Rae

N1 - Funding Information: Manuscript received January 6, 2003. This work was supported by in part by the Korea Ministry of Science and Technology, under the National Research Laboratory program, under Grant R01-2000-000-00234-0 from the Basic Research Program of the Korea Science and Engineering Foundation, by the Advanced Backbone Information and Telecommunication Technology Development Project, Korea Ministry of Information and Communication through Sam-sung Advanced Institute of Technology, and by the DuPont Young Faculty Program.

PY - 2003/9

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N2 - The authors investigated the specularity and thermal characteristics of CoNbZr-based spin valves (SVs) with and without employing nano oxide layers (NOL). Both CoNbZr- and Ta-based SV films composed of Si-SiO2-CoNbZr (or Ta)-CoFe-NOL-CoFe-Cu-CoFe-IrMn-CoNbZr (or Ta) were prepared by rf magnetron sputtering. Magnetoresistance (MR) ratios in the as-deposited state increased 48% (3.4% → 5.0%) with incorporation of NOL. In particular, a remarkable enhancement (about 95%) in the MR ratio after annealing at 300 °C for 20 min was observed (5.0% → 9.8%). According to the auger electron spectroscopy depth profile, the large increase of the MR ratios in the initial stage of annealing were due to the double specular scattering effects by the Mn-oxides at the surface and the NOL in the free layer. Due to high affinity of Mn for oxygen, Mn diffused preferentially to the position of high oxygen potential (such as the surface or the NOL) during prolonged annealing. The authors could artificially control the diffusion direction of Mn by providing an oxygen potential (like inserting NOL) in the SV structure.

AB - The authors investigated the specularity and thermal characteristics of CoNbZr-based spin valves (SVs) with and without employing nano oxide layers (NOL). Both CoNbZr- and Ta-based SV films composed of Si-SiO2-CoNbZr (or Ta)-CoFe-NOL-CoFe-Cu-CoFe-IrMn-CoNbZr (or Ta) were prepared by rf magnetron sputtering. Magnetoresistance (MR) ratios in the as-deposited state increased 48% (3.4% → 5.0%) with incorporation of NOL. In particular, a remarkable enhancement (about 95%) in the MR ratio after annealing at 300 °C for 20 min was observed (5.0% → 9.8%). According to the auger electron spectroscopy depth profile, the large increase of the MR ratios in the initial stage of annealing were due to the double specular scattering effects by the Mn-oxides at the surface and the NOL in the free layer. Due to high affinity of Mn for oxygen, Mn diffused preferentially to the position of high oxygen potential (such as the surface or the NOL) during prolonged annealing. The authors could artificially control the diffusion direction of Mn by providing an oxygen potential (like inserting NOL) in the SV structure.

KW - Amorphous CoNbZr spin valves

KW - Mn diffusion

KW - Nano oxide layer

KW - Specular scattering

KW - Thermal stability

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JO - IEEE Transactions on Magnetics

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Thermal and Mn Diffusion Behaviors of CoNbZr-Based Spin Valves with Nano Oxide Layers

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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