Abstract
In this study, we propose a simple method for obtaining the thermal conductivity of silicon nanowires (SiNWs) embedded on a thermoelectric platform. The approximation of the heat flux in SiNWs with temperature differences enables the determination of thermal conductivity. Using this method, the thermal conductivities of our n- and p-type SiNWs are found to be 18.06 ± 0.12 and 20.29 ± 0.77 W m-1 • K-1, respectively. The atomic weight of arsenic ions in the n-type SiNWs is responsible for a lower thermal conductivity than that of boron ions in the p-type SiNWs. Our results demonstrate that this simple method is capable of measuring the thermal conductivity of thermoelectric nanomaterials embedded on thermoelectric devices.
Original language | English |
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Article number | 105007 |
Journal | Measurement Science and Technology |
Volume | 27 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2016 Sept 2 |
Keywords
- Si nanowires
- heat transfer
- plastic
- thermal conductivity
- thermoelectric module
ASJC Scopus subject areas
- Instrumentation
- Engineering (miscellaneous)
- Applied Mathematics