Thermal conductivity of silicon nanowires embedded on thermoelectric platforms

Jinyong Choi, Kyoungah Cho, Dae Sung Yoon, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


In this study, we propose a simple method for obtaining the thermal conductivity of silicon nanowires (SiNWs) embedded on a thermoelectric platform. The approximation of the heat flux in SiNWs with temperature differences enables the determination of thermal conductivity. Using this method, the thermal conductivities of our n- and p-type SiNWs are found to be 18.06 ± 0.12 and 20.29 ± 0.77 W m-1 • K-1, respectively. The atomic weight of arsenic ions in the n-type SiNWs is responsible for a lower thermal conductivity than that of boron ions in the p-type SiNWs. Our results demonstrate that this simple method is capable of measuring the thermal conductivity of thermoelectric nanomaterials embedded on thermoelectric devices.

Original languageEnglish
Article number105007
JournalMeasurement Science and Technology
Issue number10
Publication statusPublished - 2016 Sept 2

Bibliographical note

Funding Information:
This work was partly supported by the Mid-career Researcher Program (No. NRF-2013R1A2A1A03070750), a grant funded by the Korean Government (MSIP) (No. NRF-2015R1A5A7037674), and the Brain Korea 21 Plus Project in 2016 through the National Research Foundation of Korea (NRF).


  • Si nanowires
  • heat transfer
  • plastic
  • thermal conductivity
  • thermoelectric module

ASJC Scopus subject areas

  • Instrumentation
  • Engineering (miscellaneous)
  • Applied Mathematics


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