Thermal conductivity of silicon nanowires embedded on thermoelectric platforms

Jinyong Choi; Kyoungah Cho; Dae Sung Yoon; Sangsig Kim

doi:10.1088/0957-0233/27/10/105007

Thermal conductivity of silicon nanowires embedded on thermoelectric platforms

Jinyong Choi, Kyoungah Cho, Dae Sung Yoon, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this study, we propose a simple method for obtaining the thermal conductivity of silicon nanowires (SiNWs) embedded on a thermoelectric platform. The approximation of the heat flux in SiNWs with temperature differences enables the determination of thermal conductivity. Using this method, the thermal conductivities of our n- and p-type SiNWs are found to be 18.06 ± 0.12 and 20.29 ± 0.77 W m^-1 • K^-1, respectively. The atomic weight of arsenic ions in the n-type SiNWs is responsible for a lower thermal conductivity than that of boron ions in the p-type SiNWs. Our results demonstrate that this simple method is capable of measuring the thermal conductivity of thermoelectric nanomaterials embedded on thermoelectric devices.

Original language	English
Article number	105007
Journal	Measurement Science and Technology
Volume	27
Issue number	10
DOIs	https://doi.org/10.1088/0957-0233/27/10/105007
Publication status	Published - 2016 Sept 2

Bibliographical note

Funding Information:
This work was partly supported by the Mid-career Researcher Program (No. NRF-2013R1A2A1A03070750), a grant funded by the Korean Government (MSIP) (No. NRF-2015R1A5A7037674), and the Brain Korea 21 Plus Project in 2016 through the National Research Foundation of Korea (NRF).

Keywords

Si nanowires
heat transfer
plastic
thermal conductivity
thermoelectric module

ASJC Scopus subject areas

Instrumentation
Engineering (miscellaneous)
Applied Mathematics

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title = "Thermal conductivity of silicon nanowires embedded on thermoelectric platforms",

abstract = "In this study, we propose a simple method for obtaining the thermal conductivity of silicon nanowires (SiNWs) embedded on a thermoelectric platform. The approximation of the heat flux in SiNWs with temperature differences enables the determination of thermal conductivity. Using this method, the thermal conductivities of our n- and p-type SiNWs are found to be 18.06 ± 0.12 and 20.29 ± 0.77 W m-1 • K-1, respectively. The atomic weight of arsenic ions in the n-type SiNWs is responsible for a lower thermal conductivity than that of boron ions in the p-type SiNWs. Our results demonstrate that this simple method is capable of measuring the thermal conductivity of thermoelectric nanomaterials embedded on thermoelectric devices.",

keywords = "Si nanowires, heat transfer, plastic, thermal conductivity, thermoelectric module",

author = "Jinyong Choi and Kyoungah Cho and Yoon, {Dae Sung} and Sangsig Kim",

note = "Funding Information: This work was partly supported by the Mid-career Researcher Program (No. NRF-2013R1A2A1A03070750), a grant funded by the Korean Government (MSIP) (No. NRF-2015R1A5A7037674), and the Brain Korea 21 Plus Project in 2016 through the National Research Foundation of Korea (NRF).",

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AU - Choi, Jinyong

AU - Cho, Kyoungah

AU - Yoon, Dae Sung

AU - Kim, Sangsig

N1 - Funding Information: This work was partly supported by the Mid-career Researcher Program (No. NRF-2013R1A2A1A03070750), a grant funded by the Korean Government (MSIP) (No. NRF-2015R1A5A7037674), and the Brain Korea 21 Plus Project in 2016 through the National Research Foundation of Korea (NRF).

PY - 2016/9/2

Y1 - 2016/9/2

N2 - In this study, we propose a simple method for obtaining the thermal conductivity of silicon nanowires (SiNWs) embedded on a thermoelectric platform. The approximation of the heat flux in SiNWs with temperature differences enables the determination of thermal conductivity. Using this method, the thermal conductivities of our n- and p-type SiNWs are found to be 18.06 ± 0.12 and 20.29 ± 0.77 W m-1 • K-1, respectively. The atomic weight of arsenic ions in the n-type SiNWs is responsible for a lower thermal conductivity than that of boron ions in the p-type SiNWs. Our results demonstrate that this simple method is capable of measuring the thermal conductivity of thermoelectric nanomaterials embedded on thermoelectric devices.

AB - In this study, we propose a simple method for obtaining the thermal conductivity of silicon nanowires (SiNWs) embedded on a thermoelectric platform. The approximation of the heat flux in SiNWs with temperature differences enables the determination of thermal conductivity. Using this method, the thermal conductivities of our n- and p-type SiNWs are found to be 18.06 ± 0.12 and 20.29 ± 0.77 W m-1 • K-1, respectively. The atomic weight of arsenic ions in the n-type SiNWs is responsible for a lower thermal conductivity than that of boron ions in the p-type SiNWs. Our results demonstrate that this simple method is capable of measuring the thermal conductivity of thermoelectric nanomaterials embedded on thermoelectric devices.

KW - Si nanowires

KW - heat transfer

KW - plastic

KW - thermal conductivity

KW - thermoelectric module

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JF - Measurement Science and Technology

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Thermal conductivity of silicon nanowires embedded on thermoelectric platforms

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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