Thermal conductivity of silicon nanowires embedded on thermoelectric platforms

Jinyong Choi, Kyoungah Cho, Dae Sung Yoon, Sangsig Kim

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)

    Abstract

    In this study, we propose a simple method for obtaining the thermal conductivity of silicon nanowires (SiNWs) embedded on a thermoelectric platform. The approximation of the heat flux in SiNWs with temperature differences enables the determination of thermal conductivity. Using this method, the thermal conductivities of our n- and p-type SiNWs are found to be 18.06 ± 0.12 and 20.29 ± 0.77 W m-1 • K-1, respectively. The atomic weight of arsenic ions in the n-type SiNWs is responsible for a lower thermal conductivity than that of boron ions in the p-type SiNWs. Our results demonstrate that this simple method is capable of measuring the thermal conductivity of thermoelectric nanomaterials embedded on thermoelectric devices.

    Original languageEnglish
    Article number105007
    JournalMeasurement Science and Technology
    Volume27
    Issue number10
    DOIs
    Publication statusPublished - 2016 Sept 2

    Bibliographical note

    Funding Information:
    This work was partly supported by the Mid-career Researcher Program (No. NRF-2013R1A2A1A03070750), a grant funded by the Korean Government (MSIP) (No. NRF-2015R1A5A7037674), and the Brain Korea 21 Plus Project in 2016 through the National Research Foundation of Korea (NRF).

    Keywords

    • Si nanowires
    • heat transfer
    • plastic
    • thermal conductivity
    • thermoelectric module

    ASJC Scopus subject areas

    • Instrumentation
    • Engineering (miscellaneous)
    • Applied Mathematics

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