Thermal nitridation and oxygen-induced etching reactions: A comparative study on Si(100) and (111) surfaces by scanning tunneling microscopy

Keyphrases

• Scanning Tunneling Microscopy 100%
• Si(111) 100%
• Etching Reaction 100%
• Thermal Nitridation 100%
• (111) Surface 100%
• Si(111) Surface 66%
• Silicon Nanostructures 66%
• Silicon Nitride 33%
• Silicon Nitride Layer 33%
• Protrusion 33%
• Nitrides 33%
• Oxygen Partial Pressure 33%
• Scanning Tunneling Microscope 33%
• Lattice Mismatch 33%
• Narrow Size Distribution 33%
• Nitrogen Gas 33%
• (100) Surfaces 33%
• Si(100) Surface 33%
• Oxygen Plasma Etching 33%
• Silicon Dots 33%
• Symmetry Mismatch 33%
• Oxygen Exposure 33%
• Nitrogen Species 33%

Engineering

• Nanomaterial 100%
• Scanning Tunneling Microscopy 100%
• Torr 50%
• Oxygen Partial Pressure 50%
• Nitride 50%
• Nitride Layer 50%
• Scanning Tunneling Microscope 50%
• Oxygen Exposure 50%

Material Science

• Nitriding 100%
• Silicon 100%
• Surface (Surface Science) 100%
• Silicon Nitride 40%
• Nanostructure 40%