Thermal simulations of high power, bulk GaN rectifiers

R. Mehandru; S. Kim; J. Kim; F. Ren; J. R. Lothian; S. J. Pearton; S. S. Park; Y. J. Park

doi:10.1016/S0038-1101(02)00481-1

Thermal simulations of high power, bulk GaN rectifiers

R. Mehandru, S. Kim, J. Kim, F. Ren, J. R. Lothian, S. J. Pearton, S. S. Park, Y. J. Park

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

A finite element simulation was used to quantitatively estimate the effectiveness of flip-chip bonding in the temperature rise of bulk GaN Schottky rectifiers under various conditions of current density, duty cycle, forward turn-on voltage and on-state resistance. The temperature difference between flip-chip bonded devices and bottom bonded devices was 20 °C even at modest current densities. The maximum temperature in the bulk cases occurred in the center of the GaN substrate thickness. The transit time of the temperature reaching the steady state for the flip-chip bonding device is in the range of millisecond, which is faster than that of most power switch applications. Flip-chip bonding is suggested to improve the heat dissipation of high power, bulk GaN rectifiers.

Original language	English
Pages (from-to)	1037-1043
Number of pages	7
Journal	Solid-State Electronics
Volume	47
Issue number	6
DOIs	https://doi.org/10.1016/S0038-1101(02)00481-1
Publication status	Published - 2003 Jun
Externally published	Yes

Bibliographical note

Funding Information:
The work at UF is partially funded by EPRI agreement EP-P 9253/c 4667 (Ben Damsky).

Copyright:
Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.

Keywords

Bulk GaN rectifiers
High power rectifiers
Temperature rise in GaN diodes
Thermal simulation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/S0038-1101(02)00481-1

Cite this

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abstract = "A finite element simulation was used to quantitatively estimate the effectiveness of flip-chip bonding in the temperature rise of bulk GaN Schottky rectifiers under various conditions of current density, duty cycle, forward turn-on voltage and on-state resistance. The temperature difference between flip-chip bonded devices and bottom bonded devices was 20 °C even at modest current densities. The maximum temperature in the bulk cases occurred in the center of the GaN substrate thickness. The transit time of the temperature reaching the steady state for the flip-chip bonding device is in the range of millisecond, which is faster than that of most power switch applications. Flip-chip bonding is suggested to improve the heat dissipation of high power, bulk GaN rectifiers.",

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AU - Mehandru, R.

AU - Kim, S.

AU - Kim, J.

AU - Ren, F.

AU - Lothian, J. R.

AU - Pearton, S. J.

AU - Park, S. S.

AU - Park, Y. J.

PY - 2003/6

Y1 - 2003/6

N2 - A finite element simulation was used to quantitatively estimate the effectiveness of flip-chip bonding in the temperature rise of bulk GaN Schottky rectifiers under various conditions of current density, duty cycle, forward turn-on voltage and on-state resistance. The temperature difference between flip-chip bonded devices and bottom bonded devices was 20 °C even at modest current densities. The maximum temperature in the bulk cases occurred in the center of the GaN substrate thickness. The transit time of the temperature reaching the steady state for the flip-chip bonding device is in the range of millisecond, which is faster than that of most power switch applications. Flip-chip bonding is suggested to improve the heat dissipation of high power, bulk GaN rectifiers.

AB - A finite element simulation was used to quantitatively estimate the effectiveness of flip-chip bonding in the temperature rise of bulk GaN Schottky rectifiers under various conditions of current density, duty cycle, forward turn-on voltage and on-state resistance. The temperature difference between flip-chip bonded devices and bottom bonded devices was 20 °C even at modest current densities. The maximum temperature in the bulk cases occurred in the center of the GaN substrate thickness. The transit time of the temperature reaching the steady state for the flip-chip bonding device is in the range of millisecond, which is faster than that of most power switch applications. Flip-chip bonding is suggested to improve the heat dissipation of high power, bulk GaN rectifiers.

KW - Bulk GaN rectifiers

KW - High power rectifiers

KW - Temperature rise in GaN diodes

KW - Thermal simulation

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Thermal simulations of high power, bulk GaN rectifiers

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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