Thermal stability and structural characteristics of HfO₂ films on Si (100) grown by atomic-layer deposition

Keyphrases

• Thermal Stability 100%
• Si(111) 100%
• Atomic Layer Deposition 100%
• HfO2 Films 100%
• Thermal-structural 100%
• Amorphous Structure 50%
• Interfacial Layer 50%
• Polycrystalline Structure 50%
• Thick Film 25%
• X-ray Photoelectron Spectroscopy 25%
• Si Substrate 25%
• Post-annealing 25%
• Film Thickness 25%
• Diffraction 25%
• Silicide Layer 25%
• Ultra-high Vacuum 25%
• Interfacial Region 25%
• Chemical State 25%
• Vacuum Condition 25%
• Tetragonal Crystal 25%
• Initial Growth Stage 25%
• Silicate Layer 25%
• Gate Stack Structure 25%
• Characteristic State 25%
• Monoclinic Crystals 25%
• HfO2 Dielectric 25%
• Hafnium Silicate 25%
• Rapid Temperature Annealing 25%

Engineering

• Polycrystalline 100%
• Interfacial Layer 100%
• Atomic Layer Deposition 100%
• Dielectrics 50%
• Ray Diffraction 50%
• Si Substrate 50%
• Annealing Temperature 50%
• Ray Photoelectron Spectroscopy 50%
• Monoclinic 50%
• Interfacial Region 50%
• Oxidized Si 50%
• Gate Stack 50%
• Crystal Structure 50%

Material Science

• Thermal Stability 100%
• Film 100%
• Silicate 40%
• Amorphous Material 40%
• Thick Films 20%
• Annealing 20%
• Film Thickness 20%
• Silicide 20%
• Photoemission Spectroscopy 20%
• Chemical State 20%
• Hafnium 20%
• Dielectric Material 20%
• Crystal Structure 20%