Thermal stability of WSix and W Schottky contacts on n-GaN

Jihyun Kim; F. Ren; A. G. Baca; S. J. Pearton

doi:10.1063/1.1576506

Thermal stability of WSi_x and W Schottky contacts on n-GaN

Jihyun Kim, F. Ren, A. G. Baca, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

The thermal stability of sputter-deposited W and WSi_x Schottky contacts on n-type GaN was reported. The barrier height was low for both W and WSi_x and the reverse current were larger than predicted from thermionic emission transport for both types of contacts. The results showed that the WSi_x was stable for anneals up to 600°C.

Original language	English
Pages (from-to)	3263-3265
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	19
DOIs	https://doi.org/10.1063/1.1576506
Publication status	Published - 2003 May 12
Externally published	Yes

Bibliographical note

Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1576506

Cite this

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title = "Thermal stability of WSix and W Schottky contacts on n-GaN",

abstract = "The thermal stability of sputter-deposited W and WSix Schottky contacts on n-type GaN was reported. The barrier height was low for both W and WSix and the reverse current were larger than predicted from thermionic emission transport for both types of contacts. The results showed that the WSix was stable for anneals up to 600°C.",

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AU - Ren, F.

AU - Baca, A. G.

AU - Pearton, S. J.

PY - 2003/5/12

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N2 - The thermal stability of sputter-deposited W and WSix Schottky contacts on n-type GaN was reported. The barrier height was low for both W and WSix and the reverse current were larger than predicted from thermionic emission transport for both types of contacts. The results showed that the WSix was stable for anneals up to 600°C.

AB - The thermal stability of sputter-deposited W and WSix Schottky contacts on n-type GaN was reported. The barrier height was low for both W and WSix and the reverse current were larger than predicted from thermionic emission transport for both types of contacts. The results showed that the WSix was stable for anneals up to 600°C.

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