Thermal stability of WSiX Schottky contacts on n-type 4H-SiC

Jihyun Kim, F. Ren, A. G. Baca, G. Y. Chung, S. J. Pearton

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


Sputter-deposited WSi0.45 rectifying contacts were characterized on n-type 4H-SiC as a function of annealing and measuremental temperature. The as-deposited contacts show evidence of recombination-dominated carrier transport and a high series resistance due to ion-induced damage occurring during the Ar plasma-assisted deposition. Annealing at 500 °C for 1 min produced a maximum barrier height of 1.15 eV and reduced the diode ideality factor. The contacts were degraded by annealing at >700 °C but showed reduced forward and reverse currents when measured at elevated temperature (300 °C) compared to the more common Ni rectifying contacts.

Original languageEnglish
Pages (from-to)175-178
Number of pages4
JournalSolid-State Electronics
Issue number1
Publication statusPublished - 2004 Jan
Externally publishedYes

Bibliographical note

Funding Information:
The work at UF is particularly supported by NASA (NAG10-316, Dr. William Knott) and the UCF-UF Space research initiative. The work at Sterling Semiconductor is particularly supported by Air Force Contract F33615-01-11-2136 (Dr. James Schofield). Sandia is a multiprogram laboratory operated by Sandia Corporation for Lockheed–Martin under DOE contract DE-AC-04-55000.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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