Gallium oxide (Ga2O3) exhibits complex behavior under ion irradiation since ion-induced disorder affects not only the functional properties but can provoke polymorphic transformations in Ga2O3. A conventional way used to minimize the lattice disorder is by doing postirradiation anneals. An alternative approach is to prevent the disorder accumulation from the beginning, by doing implants at elevated temperatures, so that a significant fraction of the disorder dynamically anneals out in radiation-assisted processes. Here, we use these two approaches for the minimization of radiation disorder in monoclinic β-Ga2O3 implanted to a dose below the threshold required for the polymorphic transformations. The results obtained by a combination of channeling and x-ray diffraction techniques revealed that implants at 300 °C effectively suppress the defect formation in β-Ga2O3. On the other hand, in order to reach similar crystalline quality in the samples implanted at room temperature, postirradiation anneals in excess of 900 °C are necessary.
|Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
|Published - 2023 Mar 1
Bibliographical noteFunding Information:
M-ERA.NET Program is acknowledged for financial support via GOFIB project (administrated by the Research Council of Norway under Project No. 337627). The international collaboration was enabled through the INTPART and UTFORSK Programs at the Research Council of Norway and the Directorate for Higher Education and Skills in Norway (NEARTEMS Project No. 322382 and SPECTRINKO Project No. UTF-2021/10210). The Research Council of Norway is also acknowledged for the support of the Norwegian Micro- and Nano-Fabrication Facility, NorFab, Project No. 295864.
© 2023 Author(s).
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films