Thermally stable AuBe-based ohmic contacts to p-type GaP for AlGaInP-based light-emitting diode by using a tungsten barrier layer

Dae Hyun Kim, Daesung Kang, Jae Seong Park, Tae Yeon Seong

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We investigated how a tungsten diffusion barrier layer affected the electrical properties of AuBe/Au contacts to a p-GaP window layer (na = 5 × 1019 cm−3) for an AlGaInP-based light emitting diode. All of the as-deposited samples were ohmic. After annealing at 500 °C, the AuBe/Au contacts were electrically degraded with a specific contact resistivity of 1.0 × 10−4 Ωcm2. However, the electrical properties of the W-based contacts were improved, having a contact resistivity of 5.0 × 10−6 Ωcm2. The X-ray photoemission spectroscopy (XPS) results showed that the Ga 2p core level for the annealed AuBe/Au contacts shifted to the high binding-energy side. On the other hand, that for the AuBe/W/Au contacts shifted toward the lower binding-energy side. For the AuBe/Au contacts, both Be and P atoms were shown to be outdiffused into the metal contact after annealing. However, for the AuBe/W/Au contacts, the outdiffusion of Be atoms was prevented by the W barrier layer, and the Be atoms were indiffused into GaP. Based on the X-ray photoemission spectroscopy (XPS), Auger electron spectroscopy (AES), and electrical results, the annealing-induced electrical degradation and improvement are described and discussed.

Original languageEnglish
Pages (from-to)306-310
Number of pages5
JournalJournal of the Korean Physical Society
Volume68
Issue number2
DOIs
Publication statusPublished - 2016 Jan 1

Bibliographical note

Funding Information:
This work was supported by LG Innotek, Co., Ltd, and by the Brain Korea 21 program, which is funded by the Ministry of Science, ICT, and Future Planning, Korea.

Publisher Copyright:
© 2016, The Korean Physical Society.

Keywords

  • AuBe
  • Contact
  • GaP
  • Light-emitting diodes
  • W diffusion barrier

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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