Thermally stable Nb and Nb/Au ohmic contacts to p-GaN

Han Ki Kim, Tae Yeon Seong, Cheul Ro Lee

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


We have investigated Nb single and Nb/Au metallization schemes for the formation of thermally stable ohmic contacts to p-GaN. It is shown that the as-deposited Nb and Nb/Au contacts exhibit rectifying behavior. However, both the contacts produce ohmic characteristics when annealed at 850°C. Measurements show that the 850°C Nb/Au and Nb contacts yield a specific contact resistance of 1.9 × 10-3 and 2 × 10-2 Ωcm2, respectively. Schottky barrier heights are found to decrease with increasing annealing temperature. A comparison of the XRD and electrical results shows that the formation of gallide phases, such as Ga-Nb and Ga-Au compounds, play a role in forming ohmic contacts. Atomic force microscopy results show that the surface morphology of the Nb contacts is fairly stable up to 850°C, while the Nb/Au contacts are slightly degraded upon annealing at 850°C.

Original languageEnglish
Pages (from-to)266-270
Number of pages5
JournalJournal of Electronic Materials
Issue number3
Publication statusPublished - 2001 Mar
Externally publishedYes

Bibliographical note

Funding Information:
This work was supported by the Brain Korea 21 project.


  • Au
  • Nb
  • Ohmic contacts
  • P-GaN
  • Schottky barrier heights

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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