Thermally stable Nb and Nb/Au ohmic contacts to p-GaN

Han Ki Kim; Tae Yeon Seong; Cheul Ro Lee

doi:10.1007/s11664-001-0027-x

Thermally stable Nb and Nb/Au ohmic contacts to p-GaN

Han Ki Kim, Tae Yeon Seong, Cheul Ro Lee

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We have investigated Nb single and Nb/Au metallization schemes for the formation of thermally stable ohmic contacts to p-GaN. It is shown that the as-deposited Nb and Nb/Au contacts exhibit rectifying behavior. However, both the contacts produce ohmic characteristics when annealed at 850°C. Measurements show that the 850°C Nb/Au and Nb contacts yield a specific contact resistance of 1.9 × 10^-3 and 2 × 10^-2 Ωcm², respectively. Schottky barrier heights are found to decrease with increasing annealing temperature. A comparison of the XRD and electrical results shows that the formation of gallide phases, such as Ga-Nb and Ga-Au compounds, play a role in forming ohmic contacts. Atomic force microscopy results show that the surface morphology of the Nb contacts is fairly stable up to 850°C, while the Nb/Au contacts are slightly degraded upon annealing at 850°C.

Original language	English
Pages (from-to)	266-270
Number of pages	5
Journal	Journal of Electronic Materials
Volume	30
Issue number	3
DOIs	https://doi.org/10.1007/s11664-001-0027-x
Publication status	Published - 2001 Mar
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by the Brain Korea 21 project.

Keywords

Au
Nb
Ohmic contacts
P-GaN
Schottky barrier heights

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-001-0027-x

Cite this

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title = "Thermally stable Nb and Nb/Au ohmic contacts to p-GaN",

abstract = "We have investigated Nb single and Nb/Au metallization schemes for the formation of thermally stable ohmic contacts to p-GaN. It is shown that the as-deposited Nb and Nb/Au contacts exhibit rectifying behavior. However, both the contacts produce ohmic characteristics when annealed at 850°C. Measurements show that the 850°C Nb/Au and Nb contacts yield a specific contact resistance of 1.9 × 10-3 and 2 × 10-2 Ωcm2, respectively. Schottky barrier heights are found to decrease with increasing annealing temperature. A comparison of the XRD and electrical results shows that the formation of gallide phases, such as Ga-Nb and Ga-Au compounds, play a role in forming ohmic contacts. Atomic force microscopy results show that the surface morphology of the Nb contacts is fairly stable up to 850°C, while the Nb/Au contacts are slightly degraded upon annealing at 850°C.",

keywords = "Au, Nb, Ohmic contacts, P-GaN, Schottky barrier heights",

author = "Kim, {Han Ki} and Seong, {Tae Yeon} and Lee, {Cheul Ro}",

note = "Funding Information: This work was supported by the Brain Korea 21 project.",

year = "2001",

month = mar,

doi = "10.1007/s11664-001-0027-x",

language = "English",

volume = "30",

pages = "266--270",

journal = "Journal of Electronic Materials",

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T1 - Thermally stable Nb and Nb/Au ohmic contacts to p-GaN

AU - Kim, Han Ki

AU - Seong, Tae Yeon

AU - Lee, Cheul Ro

N1 - Funding Information: This work was supported by the Brain Korea 21 project.

PY - 2001/3

Y1 - 2001/3

N2 - We have investigated Nb single and Nb/Au metallization schemes for the formation of thermally stable ohmic contacts to p-GaN. It is shown that the as-deposited Nb and Nb/Au contacts exhibit rectifying behavior. However, both the contacts produce ohmic characteristics when annealed at 850°C. Measurements show that the 850°C Nb/Au and Nb contacts yield a specific contact resistance of 1.9 × 10-3 and 2 × 10-2 Ωcm2, respectively. Schottky barrier heights are found to decrease with increasing annealing temperature. A comparison of the XRD and electrical results shows that the formation of gallide phases, such as Ga-Nb and Ga-Au compounds, play a role in forming ohmic contacts. Atomic force microscopy results show that the surface morphology of the Nb contacts is fairly stable up to 850°C, while the Nb/Au contacts are slightly degraded upon annealing at 850°C.

AB - We have investigated Nb single and Nb/Au metallization schemes for the formation of thermally stable ohmic contacts to p-GaN. It is shown that the as-deposited Nb and Nb/Au contacts exhibit rectifying behavior. However, both the contacts produce ohmic characteristics when annealed at 850°C. Measurements show that the 850°C Nb/Au and Nb contacts yield a specific contact resistance of 1.9 × 10-3 and 2 × 10-2 Ωcm2, respectively. Schottky barrier heights are found to decrease with increasing annealing temperature. A comparison of the XRD and electrical results shows that the formation of gallide phases, such as Ga-Nb and Ga-Au compounds, play a role in forming ohmic contacts. Atomic force microscopy results show that the surface morphology of the Nb contacts is fairly stable up to 850°C, while the Nb/Au contacts are slightly degraded upon annealing at 850°C.

KW - Au

KW - Nb

KW - Ohmic contacts

KW - P-GaN

KW - Schottky barrier heights

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JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 3

ER -

Thermally stable Nb and Nb/Au ohmic contacts to p-GaN

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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