Thermally stable Ti/Al-based ohmic contacts to N-polar n-GaN by using an indium interlayer

Sung Ki Kim; Jae Chun Han; Tae Yeon Seong

doi:10.7567/JJAP.55.031001

Thermally stable Ti/Al-based ohmic contacts to N-polar n-GaN by using an indium interlayer

Sung Ki Kim, Jae Chun Han, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The electrical properties of In/Ti/Al/Au contacts to N-polar n-GaN (nd = 5×1018cm%3) for high-power vertical light-emitting diodes were investigated at various thicknesses of the In layer, and compared with those of Ti/Al/Au contacts. Before annealing, both the Ti/Al/Au and In/Ti/Al/Au contacts were ohmic. After annealing at 300 C for 1 min, all of the samples exhibited some degradation of their electrical properties, although the In/Ti/Al/Au samples were more thermally stable. After annealing at 300 C for 60 min, the Ti/Al/Au contacts became non-ohmic, while the In (5 nm)/Ti/Al/Au contacts remained ohmic with a contact resistivity of 2.6×10%4?cm2. X-ray photoemission spectroscopy (XPS) results showed that, for all of the samples, annealing caused an increase in the content of interfacial oxygen. Based on the XPS and electrical results, the annealing dependence of the electrical characteristics of In/Ti/Al/Au contacts are described and discussed.

Original language	English
Article number	031001
Journal	Japanese journal of applied physics
Volume	55
Issue number	3
DOIs	https://doi.org/10.7567/JJAP.55.031001
Publication status	Published - 2016 Mar

Bibliographical note

Publisher Copyright:
© 2016 The Japan Society of Applied Physics.

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.7567/JJAP.55.031001

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@article{8568e2ab1746490cac58db77cf53ab17,

title = "Thermally stable Ti/Al-based ohmic contacts to N-polar n-GaN by using an indium interlayer",

abstract = "The electrical properties of In/Ti/Al/Au contacts to N-polar n-GaN (nd = 5×1018cm%3) for high-power vertical light-emitting diodes were investigated at various thicknesses of the In layer, and compared with those of Ti/Al/Au contacts. Before annealing, both the Ti/Al/Au and In/Ti/Al/Au contacts were ohmic. After annealing at 300 C for 1 min, all of the samples exhibited some degradation of their electrical properties, although the In/Ti/Al/Au samples were more thermally stable. After annealing at 300 C for 60 min, the Ti/Al/Au contacts became non-ohmic, while the In (5 nm)/Ti/Al/Au contacts remained ohmic with a contact resistivity of 2.6×10%4?cm2. X-ray photoemission spectroscopy (XPS) results showed that, for all of the samples, annealing caused an increase in the content of interfacial oxygen. Based on the XPS and electrical results, the annealing dependence of the electrical characteristics of In/Ti/Al/Au contacts are described and discussed.",

author = "Kim, {Sung Ki} and Han, {Jae Chun} and Seong, {Tae Yeon}",

note = "Publisher Copyright: {\textcopyright} 2016 The Japan Society of Applied Physics.",

year = "2016",

month = mar,

doi = "10.7567/JJAP.55.031001",

language = "English",

volume = "55",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "3",

}

TY - JOUR

T1 - Thermally stable Ti/Al-based ohmic contacts to N-polar n-GaN by using an indium interlayer

AU - Kim, Sung Ki

AU - Han, Jae Chun

AU - Seong, Tae Yeon

PY - 2016/3

Y1 - 2016/3

N2 - The electrical properties of In/Ti/Al/Au contacts to N-polar n-GaN (nd = 5×1018cm%3) for high-power vertical light-emitting diodes were investigated at various thicknesses of the In layer, and compared with those of Ti/Al/Au contacts. Before annealing, both the Ti/Al/Au and In/Ti/Al/Au contacts were ohmic. After annealing at 300 C for 1 min, all of the samples exhibited some degradation of their electrical properties, although the In/Ti/Al/Au samples were more thermally stable. After annealing at 300 C for 60 min, the Ti/Al/Au contacts became non-ohmic, while the In (5 nm)/Ti/Al/Au contacts remained ohmic with a contact resistivity of 2.6×10%4?cm2. X-ray photoemission spectroscopy (XPS) results showed that, for all of the samples, annealing caused an increase in the content of interfacial oxygen. Based on the XPS and electrical results, the annealing dependence of the electrical characteristics of In/Ti/Al/Au contacts are described and discussed.

AB - The electrical properties of In/Ti/Al/Au contacts to N-polar n-GaN (nd = 5×1018cm%3) for high-power vertical light-emitting diodes were investigated at various thicknesses of the In layer, and compared with those of Ti/Al/Au contacts. Before annealing, both the Ti/Al/Au and In/Ti/Al/Au contacts were ohmic. After annealing at 300 C for 1 min, all of the samples exhibited some degradation of their electrical properties, although the In/Ti/Al/Au samples were more thermally stable. After annealing at 300 C for 60 min, the Ti/Al/Au contacts became non-ohmic, while the In (5 nm)/Ti/Al/Au contacts remained ohmic with a contact resistivity of 2.6×10%4?cm2. X-ray photoemission spectroscopy (XPS) results showed that, for all of the samples, annealing caused an increase in the content of interfacial oxygen. Based on the XPS and electrical results, the annealing dependence of the electrical characteristics of In/Ti/Al/Au contacts are described and discussed.

UR - http://www.scopus.com/inward/record.url?scp=84962026640&partnerID=8YFLogxK

U2 - 10.7567/JJAP.55.031001

DO - 10.7567/JJAP.55.031001

M3 - Article

AN - SCOPUS:84962026640

SN - 0021-4922

VL - 55

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 3

M1 - 031001

ER -

Thermally stable Ti/Al-based ohmic contacts to N-polar n-GaN by using an indium interlayer

Abstract

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