Thermodynamic analysis and growth characterization of thick GaN films grown by chloride VPE using GaCl3/N2 and NH3/N2

Heon Lee, Masaaki Yuri, Tetsuzo Ueda, James S. Harris

Research output: Contribution to journalConference articlepeer-review


Thermodynamic calculations were carried out on chloride transport vapor phase epitaxy of GaN using GaCl3/N2 and NH3/N2. At typical growth temperature and gas flow rates, both GaN formation and gas phase etching reactions of GaN are thermodynamically favored. Under thermodynamic equilibrium, most ammonia should decompose to nitrogen and hydrogen gases and gas phase etching of GaN occurs by HCl. From experimental measurements, less than 10% of the incoming ammonia decomposes and under this condition, GaN formation from GaCl3/N2 and NH3/N2 is thermodynamically favored. Higher V/III ratios give a larger driving force for GaN formation. These calculations match our experimental results. Experimentally, we have optimized the growth conditions of GaN. High crystalline quality thick GaN films (10 to approximately 15 μm) were grown on c-Al2O3. The GaN films show band edge emission dominated PL at both room temperature and 77 K. Only one set of diffraction peaks from (101̄2) planes with 60° spacing in the φ-scan of X-ray diffraction are observed. This indicates that the GaN films grown on c-Al2O3 are single crystalline. Typical growth rates were about 10 to approximately 15 μm/hr and typical Hall mobility values of GaN films were in the range of 3 to 40 cm2/V sec.

Original languageEnglish
Pages (from-to)233-238
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1996 Apr 81996 Apr 12

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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