Thermopower profiling of a silicon p-n junction

Kyeongtae Kim; Jisang Park; Sun Ung Kim; Ohmyoung Kwon; Joon Sik Lee; Seungho Ho Park; Young Ki Choi

doi:10.1063/1.2432949

Thermopower profiling of a silicon p-n junction

Kyeongtae Kim, Jisang Park, Sun Ung Kim, Ohmyoung Kwon, Joon Sik Lee, Seungho Ho Park, Young Ki Choi

School of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

An ac type thermopower measurement technique was suggested and demonstrated with a simple experimental setup. The thermopower distribution across a silicon p-n junction was measured point by point at every 10 nm, so that it was free from the noise due to the built-in potential and photoionization effects, and it was compared with the theoretical result. Although this ac type thermopower measurement technique could not follow the sharp variation of the theoretical thermopower near the p-n junction, it could identify a smooth peak of the thermopower distribution in the depletion layer of the p-n junction.

Original language	English
Article number	043107
Journal	Applied Physics Letters
Volume	90
Issue number	4
DOIs	https://doi.org/10.1063/1.2432949
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2432949

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title = "Thermopower profiling of a silicon p-n junction",

abstract = "An ac type thermopower measurement technique was suggested and demonstrated with a simple experimental setup. The thermopower distribution across a silicon p-n junction was measured point by point at every 10 nm, so that it was free from the noise due to the built-in potential and photoionization effects, and it was compared with the theoretical result. Although this ac type thermopower measurement technique could not follow the sharp variation of the theoretical thermopower near the p-n junction, it could identify a smooth peak of the thermopower distribution in the depletion layer of the p-n junction.",

author = "Kyeongtae Kim and Jisang Park and Kim, {Sun Ung} and Ohmyoung Kwon and Lee, {Joon Sik} and Park, {Seungho Ho} and Choi, {Young Ki}",

note = "Funding Information: This work was supported by the Micro Thermal System Research Center sponsored by the Korean Science & Engineering Foundation, Korea Research Foundation Grant No. KRF-2004-R08-2004-000-10619-0, and Grant No. R01-2006-000-11060-0 from the Basic Research Program of the Korea Science & Engineering Foundation. ",

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doi = "10.1063/1.2432949",

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AU - Kim, Kyeongtae

AU - Park, Jisang

AU - Kim, Sun Ung

AU - Kwon, Ohmyoung

AU - Lee, Joon Sik

AU - Park, Seungho Ho

AU - Choi, Young Ki

N1 - Funding Information: This work was supported by the Micro Thermal System Research Center sponsored by the Korean Science & Engineering Foundation, Korea Research Foundation Grant No. KRF-2004-R08-2004-000-10619-0, and Grant No. R01-2006-000-11060-0 from the Basic Research Program of the Korea Science & Engineering Foundation.

PY - 2007

Y1 - 2007

N2 - An ac type thermopower measurement technique was suggested and demonstrated with a simple experimental setup. The thermopower distribution across a silicon p-n junction was measured point by point at every 10 nm, so that it was free from the noise due to the built-in potential and photoionization effects, and it was compared with the theoretical result. Although this ac type thermopower measurement technique could not follow the sharp variation of the theoretical thermopower near the p-n junction, it could identify a smooth peak of the thermopower distribution in the depletion layer of the p-n junction.

AB - An ac type thermopower measurement technique was suggested and demonstrated with a simple experimental setup. The thermopower distribution across a silicon p-n junction was measured point by point at every 10 nm, so that it was free from the noise due to the built-in potential and photoionization effects, and it was compared with the theoretical result. Although this ac type thermopower measurement technique could not follow the sharp variation of the theoretical thermopower near the p-n junction, it could identify a smooth peak of the thermopower distribution in the depletion layer of the p-n junction.

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Thermopower profiling of a silicon p-n junction

Abstract

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