Thickness dependence of magnetic domain pinning energy in GaMnAs ferromagnetic semiconductor films

Sun Young Yea; Sun Jae Chung; Hyunji Son; Sanghoon Lee; X. Liu; J. K. Furdyna

doi:10.1063/1.2836789

Thickness dependence of magnetic domain pinning energy in GaMnAs ferromagnetic semiconductor films

Sun Young Yea, Sun Jae Chung, Hyunji Son, Sanghoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Magnetotransport measurements were performed on GaMnAs films with four different thicknesses. The process of magnetization reorientation was investigated by planar Hall effect, from which the magnetization switching fields were determined for each film thickness. Domain pinning energies were then obtained for the films by fitting the angular dependence of the switching fields using the model developed by Cowburn [J. Appl. Phys. 78, 7210 (1995)]. The results show a systematic increase of domain pinning energies as the thickness of the film decreases. Such dependence of domain pinning can be understood in terms of the carrier dependence of magnetic anisotropy in GaMnAs films on the concentration of carriers.

Original language	English
Article number	07D118
Journal	Journal of Applied Physics
Volume	103
Issue number	7
DOIs	https://doi.org/10.1063/1.2836789
Publication status	Published - 2008

Bibliographical note

Funding Information:
This work was supported by Korea Research Foundation Grant No. KRF-2004-005-C00068, by the Seoul R&DB Program, and by the National Science Foundation Grant No. DMR06-03762.

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Thickness dependence of magnetic domain pinning energy in GaMnAs ferromagnetic semiconductor films",

abstract = "Magnetotransport measurements were performed on GaMnAs films with four different thicknesses. The process of magnetization reorientation was investigated by planar Hall effect, from which the magnetization switching fields were determined for each film thickness. Domain pinning energies were then obtained for the films by fitting the angular dependence of the switching fields using the model developed by Cowburn [J. Appl. Phys. 78, 7210 (1995)]. The results show a systematic increase of domain pinning energies as the thickness of the film decreases. Such dependence of domain pinning can be understood in terms of the carrier dependence of magnetic anisotropy in GaMnAs films on the concentration of carriers.",

author = "Yea, {Sun Young} and Chung, {Sun Jae} and Hyunji Son and Sanghoon Lee and X. Liu and Furdyna, {J. K.}",

note = "Funding Information: This work was supported by Korea Research Foundation Grant No. KRF-2004-005-C00068, by the Seoul R&DB Program, and by the National Science Foundation Grant No. DMR06-03762.",

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volume = "103",

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T1 - Thickness dependence of magnetic domain pinning energy in GaMnAs ferromagnetic semiconductor films

AU - Yea, Sun Young

AU - Chung, Sun Jae

AU - Son, Hyunji

AU - Lee, Sanghoon

AU - Liu, X.

AU - Furdyna, J. K.

N1 - Funding Information: This work was supported by Korea Research Foundation Grant No. KRF-2004-005-C00068, by the Seoul R&DB Program, and by the National Science Foundation Grant No. DMR06-03762.

PY - 2008

Y1 - 2008

N2 - Magnetotransport measurements were performed on GaMnAs films with four different thicknesses. The process of magnetization reorientation was investigated by planar Hall effect, from which the magnetization switching fields were determined for each film thickness. Domain pinning energies were then obtained for the films by fitting the angular dependence of the switching fields using the model developed by Cowburn [J. Appl. Phys. 78, 7210 (1995)]. The results show a systematic increase of domain pinning energies as the thickness of the film decreases. Such dependence of domain pinning can be understood in terms of the carrier dependence of magnetic anisotropy in GaMnAs films on the concentration of carriers.

AB - Magnetotransport measurements were performed on GaMnAs films with four different thicknesses. The process of magnetization reorientation was investigated by planar Hall effect, from which the magnetization switching fields were determined for each film thickness. Domain pinning energies were then obtained for the films by fitting the angular dependence of the switching fields using the model developed by Cowburn [J. Appl. Phys. 78, 7210 (1995)]. The results show a systematic increase of domain pinning energies as the thickness of the film decreases. Such dependence of domain pinning can be understood in terms of the carrier dependence of magnetic anisotropy in GaMnAs films on the concentration of carriers.

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Thickness dependence of magnetic domain pinning energy in GaMnAs ferromagnetic semiconductor films

Abstract

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