Abstract
Our investigation of thin GaMnAs films with different thicknesses revealed that the magnetic properties of this material strongly depend on film thickness. For this study, a single GaMnAs film was selectively etched, and its properties were then investigated by planar Hall effect measurements. A particularly important conclusion from the results is the emergence of a uniaxial anisotropy field along the [100] crystalline direction, which increases rapidly with increasing film thickness. We argue that such thickness dependence of the [100] uniaxial anisotropy results from the crystal structure of the film, rather than from the effects of the interface between the GaMnAs and the substrate.
Original language | English |
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Article number | 033201 |
Journal | Applied Physics Express |
Volume | 8 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2015 Mar 1 |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)