Abstract
2D semiconductors, including transition metal dichalcogenides (TMDs), have been widely studied recently. However, the device performance is deteriorated due to the significant contact resistance. The contact resistance of MoS2-metal contacts decreases with the thickness of MoS2. We obtained a Schottky barrier height as low as about 70 meV when MoS2 is trilayer-thick. It is important to find the optimal choice of contact metal and layer thickness of MoS2.
Original language | English |
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Pages (from-to) | 6151-6157 |
Number of pages | 7 |
Journal | Nanoscale |
Volume | 9 |
Issue number | 18 |
DOIs | |
Publication status | Published - 2017 May 14 |
Bibliographical note
Publisher Copyright:© The Royal Society of Chemistry 2017.
ASJC Scopus subject areas
- Materials Science(all)