Thickness-dependent Schottky barrier height of MoS2 field-effect transistors

Junyoung Kwon; Jong Young Lee; Young Jun Yu; Chul Ho Lee; Xu Cui; James Hone; Gwan Hyoung Lee

doi:10.1039/c7nr01501a

Thickness-dependent Schottky barrier height of MoS₂ field-effect transistors

Junyoung Kwon, Jong Young Lee, Young Jun Yu, Chul Ho Lee, Xu Cui, James Hone, Gwan Hyoung Lee

KU-KIST Graduate School of Converging Science and Technology

Research output: Contribution to journal › Article › peer-review

126 Citations (Scopus)

Abstract

2D semiconductors, including transition metal dichalcogenides (TMDs), have been widely studied recently. However, the device performance is deteriorated due to the significant contact resistance. The contact resistance of MoS₂-metal contacts decreases with the thickness of MoS₂. We obtained a Schottky barrier height as low as about 70 meV when MoS₂ is trilayer-thick. It is important to find the optimal choice of contact metal and layer thickness of MoS₂.

Original language	English
Pages (from-to)	6151-6157
Number of pages	7
Journal	Nanoscale
Volume	9
Issue number	18
DOIs	https://doi.org/10.1039/c7nr01501a
Publication status	Published - 2017 May 14

Bibliographical note

Publisher Copyright:
© The Royal Society of Chemistry 2017.

ASJC Scopus subject areas

General Materials Science

Access to Document

10.1039/c7nr01501a

Cite this

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abstract = "2D semiconductors, including transition metal dichalcogenides (TMDs), have been widely studied recently. However, the device performance is deteriorated due to the significant contact resistance. The contact resistance of MoS2-metal contacts decreases with the thickness of MoS2. We obtained a Schottky barrier height as low as about 70 meV when MoS2 is trilayer-thick. It is important to find the optimal choice of contact metal and layer thickness of MoS2.",

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AU - Cui, Xu

AU - Hone, James

AU - Lee, Gwan Hyoung

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