Thickness-dependent Schottky barrier height of MoS2 field-effect transistors

Junyoung Kwon, Jong Young Lee, Young Jun Yu, Chul Ho Lee, Xu Cui, James Hone, Gwan Hyoung Lee

Research output: Contribution to journalArticlepeer-review

111 Citations (Scopus)


2D semiconductors, including transition metal dichalcogenides (TMDs), have been widely studied recently. However, the device performance is deteriorated due to the significant contact resistance. The contact resistance of MoS2-metal contacts decreases with the thickness of MoS2. We obtained a Schottky barrier height as low as about 70 meV when MoS2 is trilayer-thick. It is important to find the optimal choice of contact metal and layer thickness of MoS2.

Original languageEnglish
Pages (from-to)6151-6157
Number of pages7
Issue number18
Publication statusPublished - 2017 May 14

Bibliographical note

Publisher Copyright:
© The Royal Society of Chemistry 2017.

ASJC Scopus subject areas

  • Materials Science(all)


Dive into the research topics of 'Thickness-dependent Schottky barrier height of MoS2 field-effect transistors'. Together they form a unique fingerprint.

Cite this