TY - JOUR
T1 - Thickness effects of SiOxNy, interlayer inserted between BaTiO3 insulating layer and ZnS:Mn phosphor layer in thin film electroluminescent devices
AU - Song, M. H.
AU - Lee, Y. H.
AU - Hahn, T. S.
AU - Oh, M. H.
AU - Yoon, K. H.
N1 - Funding Information:
We wish to express our gratitude to Dr. Dong Ho Kim of the Department of Physics at Yeoung Nam University for his continuous help and useful discussions in preparing this manuscript. This work was supported by the Ministry of Science and Technology in South Korea.
PY - 1996/9
Y1 - 1996/9
N2 - We investigated the effects of a SiOxNy, interlayer on a thin film electroluminescent device, inserted between an amorphous BaTiO3 thin film and a ZnS:Mn phosphor layer. The effects on the thin film electroluminescent device was studied as a function of the thickness of the interlayer. We found that the introduction of the interlayer affected the growth behavior of the phosphor layer. With increasing thickness of the interlayer, the average grain size and the crystallinity of the phosphor layer was improved. The turn-on voltage of the electroluminescent device increased, and the saturation brightness slightly decreased with increasing interlayer thickness. In the case of the TFELD without the interlayer, Poole-Frenkel conduction was observed in the low dc field region, the devices with the interlayer exhibited effective electron tunneling from interface traps. The efficiency of the devices increased with increasing interlayer thickness.
AB - We investigated the effects of a SiOxNy, interlayer on a thin film electroluminescent device, inserted between an amorphous BaTiO3 thin film and a ZnS:Mn phosphor layer. The effects on the thin film electroluminescent device was studied as a function of the thickness of the interlayer. We found that the introduction of the interlayer affected the growth behavior of the phosphor layer. With increasing thickness of the interlayer, the average grain size and the crystallinity of the phosphor layer was improved. The turn-on voltage of the electroluminescent device increased, and the saturation brightness slightly decreased with increasing interlayer thickness. In the case of the TFELD without the interlayer, Poole-Frenkel conduction was observed in the low dc field region, the devices with the interlayer exhibited effective electron tunneling from interface traps. The efficiency of the devices increased with increasing interlayer thickness.
UR - http://www.scopus.com/inward/record.url?scp=0030565268&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(96)00234-5
DO - 10.1016/0022-0248(96)00234-5
M3 - Article
AN - SCOPUS:0030565268
SN - 0022-0248
VL - 167
SP - 157
EP - 164
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-2
ER -