Abstract
We fabricated ZnO:Zn film by rf magnetron sputtering and ZnS:Pr,Ce layer by electron-beam evaporation for color FED application. Also, in order to investigate influence of surface conductivity of phosphor film on the threshold voltage of emission, we fabricated two different kinds of layered structures having an additional conducting layer such as 5 nm thick Sn-doped In2O3 film. CL emission spectrum of sputtered ZnO:Zn (250 nm) film shows a two broad peaks centered 540 nm and 600 nm. The spectra characteristics of ZnS:Pr,Ce films shows white spectrum that covered a whole visible wavelength. One of the effect of an additional surface layer of ITO on ZnO and ZnS phosphor is the shift of spectrum toward shorter wavelength.
Original language | English |
---|---|
Pages | 619-622 |
Number of pages | 4 |
Publication status | Published - 1996 |
Event | Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia Duration: 1996 Jul 7 → 1996 Jul 12 |
Other
Other | Proceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC |
---|---|
City | St.Petersburg, Russia |
Period | 96/7/7 → 96/7/12 |
ASJC Scopus subject areas
- Surfaces and Interfaces