Thin film silicon substrate formation using electrochemical anodic etching method

J. H. Kwon; S. H. Lee; B. K. Ju

doi:10.1179/174329408X326849

Thin film silicon substrate formation using electrochemical anodic etching method

J. H. Kwon, S. H. Lee, B. K. Ju

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The production of detached porous silicon (PS) layers for layer transfer (LT) has been investigated. Electrochemical anodisation (ECA) studies of monocrystalline silicon (mono-Si) wafers in a hydrofluoric acid/ethanol/ deionised (DI) water solution showed that porosity can be controlled by controlling current density during ECA. Double layered PS layers consisting of low (26-5%) and high (86-3%) porosity layers were formed by ECA at 1-5mAcm ^-2 and 100 mA cm^-2 for etching times of 10 min and 10 sec respectively. These PS layers are considered viable for LT substrate technology.

Original language	English
Pages (from-to)	603-605
Number of pages	3
Journal	Surface Engineering
Volume	25
Issue number	8
DOIs	https://doi.org/10.1179/174329408X326849
Publication status	Published - 2009 Nov

Keywords

Anodisation
Electrochemical etching
Layer transfer
Porous silicon

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1179/174329408X326849

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title = "Thin film silicon substrate formation using electrochemical anodic etching method",

abstract = "The production of detached porous silicon (PS) layers for layer transfer (LT) has been investigated. Electrochemical anodisation (ECA) studies of monocrystalline silicon (mono-Si) wafers in a hydrofluoric acid/ethanol/ deionised (DI) water solution showed that porosity can be controlled by controlling current density during ECA. Double layered PS layers consisting of low (26-5%) and high (86-3%) porosity layers were formed by ECA at 1-5mAcm -2 and 100 mA cm-2 for etching times of 10 min and 10 sec respectively. These PS layers are considered viable for LT substrate technology.",

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AU - Kwon, J. H.

AU - Lee, S. H.

AU - Ju, B. K.

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N2 - The production of detached porous silicon (PS) layers for layer transfer (LT) has been investigated. Electrochemical anodisation (ECA) studies of monocrystalline silicon (mono-Si) wafers in a hydrofluoric acid/ethanol/ deionised (DI) water solution showed that porosity can be controlled by controlling current density during ECA. Double layered PS layers consisting of low (26-5%) and high (86-3%) porosity layers were formed by ECA at 1-5mAcm -2 and 100 mA cm-2 for etching times of 10 min and 10 sec respectively. These PS layers are considered viable for LT substrate technology.

AB - The production of detached porous silicon (PS) layers for layer transfer (LT) has been investigated. Electrochemical anodisation (ECA) studies of monocrystalline silicon (mono-Si) wafers in a hydrofluoric acid/ethanol/ deionised (DI) water solution showed that porosity can be controlled by controlling current density during ECA. Double layered PS layers consisting of low (26-5%) and high (86-3%) porosity layers were formed by ECA at 1-5mAcm -2 and 100 mA cm-2 for etching times of 10 min and 10 sec respectively. These PS layers are considered viable for LT substrate technology.

KW - Anodisation

KW - Electrochemical etching

KW - Layer transfer

KW - Porous silicon

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Thin film silicon substrate formation using electrochemical anodic etching method

Abstract

Keywords

ASJC Scopus subject areas

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