Thin film silicon substrate formation using electrochemical anodic etching method

J. H. Kwon; S. H. Lee; B. K. Ju

doi:10.1179/174329408X326849

Thin film silicon substrate formation using electrochemical anodic etching method

J. H. Kwon
, S. H. Lee
, B. K. Ju^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The production of detached porous silicon (PS) layers for layer transfer (LT) has been investigated. Electrochemical anodisation (ECA) studies of monocrystalline silicon (mono-Si) wafers in a hydrofluoric acid/ethanol/ deionised (DI) water solution showed that porosity can be controlled by controlling current density during ECA. Double layered PS layers consisting of low (26-5%) and high (86-3%) porosity layers were formed by ECA at 1-5mAcm ^-2 and 100 mA cm^-2 for etching times of 10 min and 10 sec respectively. These PS layers are considered viable for LT substrate technology.

Original language	English
Pages (from-to)	603-605
Number of pages	3
Journal	Surface Engineering
Volume	25
Issue number	8
DOIs	https://doi.org/10.1179/174329408X326849
Publication status	Published - 2009 Nov

Keywords

Anodisation
Electrochemical etching
Layer transfer
Porous silicon

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1179/174329408X326849

Cite this

@article{2d15384de5a74d059b6ffa9f3910aa78,

title = "Thin film silicon substrate formation using electrochemical anodic etching method",

abstract = "The production of detached porous silicon (PS) layers for layer transfer (LT) has been investigated. Electrochemical anodisation (ECA) studies of monocrystalline silicon (mono-Si) wafers in a hydrofluoric acid/ethanol/ deionised (DI) water solution showed that porosity can be controlled by controlling current density during ECA. Double layered PS layers consisting of low (26-5\%) and high (86-3\%) porosity layers were formed by ECA at 1-5mAcm -2 and 100 mA cm-2 for etching times of 10 min and 10 sec respectively. These PS layers are considered viable for LT substrate technology.",

keywords = "Anodisation, Electrochemical etching, Layer transfer, Porous silicon",

author = "Kwon, \{J. H.\} and Lee, \{S. H.\} and Ju, \{B. K.\}",

year = "2009",

month = nov,

doi = "10.1179/174329408X326849",

language = "English",

volume = "25",

pages = "603--605",

journal = "Surface Engineering",

issn = "0267-0844",

publisher = "SAGE Publications Ltd",

number = "8",

}

TY - JOUR

T1 - Thin film silicon substrate formation using electrochemical anodic etching method

AU - Kwon, J. H.

AU - Lee, S. H.

AU - Ju, B. K.

PY - 2009/11

Y1 - 2009/11

N2 - The production of detached porous silicon (PS) layers for layer transfer (LT) has been investigated. Electrochemical anodisation (ECA) studies of monocrystalline silicon (mono-Si) wafers in a hydrofluoric acid/ethanol/ deionised (DI) water solution showed that porosity can be controlled by controlling current density during ECA. Double layered PS layers consisting of low (26-5%) and high (86-3%) porosity layers were formed by ECA at 1-5mAcm -2 and 100 mA cm-2 for etching times of 10 min and 10 sec respectively. These PS layers are considered viable for LT substrate technology.

AB - The production of detached porous silicon (PS) layers for layer transfer (LT) has been investigated. Electrochemical anodisation (ECA) studies of monocrystalline silicon (mono-Si) wafers in a hydrofluoric acid/ethanol/ deionised (DI) water solution showed that porosity can be controlled by controlling current density during ECA. Double layered PS layers consisting of low (26-5%) and high (86-3%) porosity layers were formed by ECA at 1-5mAcm -2 and 100 mA cm-2 for etching times of 10 min and 10 sec respectively. These PS layers are considered viable for LT substrate technology.

KW - Anodisation

KW - Electrochemical etching

KW - Layer transfer

KW - Porous silicon

UR - https://www.scopus.com/pages/publications/70349280604

U2 - 10.1179/174329408X326849

DO - 10.1179/174329408X326849

M3 - Article

AN - SCOPUS:70349280604

SN - 0267-0844

VL - 25

SP - 603

EP - 605

JO - Surface Engineering

JF - Surface Engineering

IS - 8

ER -

Thin film silicon substrate formation using electrochemical anodic etching method

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this