Three-dimensional crystalline Si film growth by the Ni silicide mediation

Joondong Kim, Chang Soo Han, Yun Chang Park, Wayne A. Anderson

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


Three-dimensional crystalline Si films were grown by the Ni silicide mediation. The metal-induced growth method, which is a spontaneous reaction of metal and silicon, forms a silicide layer first then induces the crystalline Si growth. By controlling the reaction between Ni and Si, the silicide formation was modulated. The Ni Si2 migration crystallizes a Si film behind and mediates crystalline Si above it. The mechanism of silicide-mediated three-dimensional Si crystallization and the thin Si film Schottky photodiode are presented.

Original languageEnglish
Article number043501
JournalApplied Physics Letters
Issue number4
Publication statusPublished - 2008
Externally publishedYes

Bibliographical note

Copyright 2008 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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