Abstract
In this paper, we report an approach based on three-dimensional numerical simulations for the investigation of the dependence of the on/off current ratio in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional and three-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L and thickness t but varying the channel width W from 5 nm and 5 μm. By evaluating the charge distributions and the current flowlines of both the two- and three-dimensional structures, we have shown that the increase in the 'on state' conduction current in the SiNW channel is a dominant factor, which consequently results in more than a two order of magnitude improvement in the on/off current ratio.
Original language | English |
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Pages (from-to) | 1680-1684 |
Number of pages | 5 |
Journal | Journal of the Korean Physical Society |
Volume | 53 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2008 Sept |
Keywords
- Nanowire
- On/off current ratio
- SiNWFET
- Simulation
ASJC Scopus subject areas
- General Physics and Astronomy