Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect

Ki Seung Lee; Seo Won Lee; Byoung Chul Min; Kyoung Jin Lee

doi:10.1063/1.4798288

Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect

Ki Seung Lee^*
, Seo Won Lee
, Byoung Chul Min
, Kyoung Jin Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

343 Citations (Scopus)

Abstract

We theoretically investigate the switching of a perpendicular magnetic layer by in-plane charge current due to the spin Hall effect. We find that in the high damping regime, the threshold switching current is independent of the damping constant and is almost linearly proportional to both effective perpendicular magnetic anisotropy field and external in-plane field applied along the current direction. We obtain an analytic expression of the threshold current, in excellent agreement with numerical results. Based on the expression, we find that magnetization switching induced by the spin Hall effect can be practically useful when it is combined with voltage-controlled anisotropy change.

Original language	English
Article number	112410
Journal	Applied Physics Letters
Volume	102
Issue number	11
DOIs	https://doi.org/10.1063/1.4798288
Publication status	Published - 2013 Mar 18

Bibliographical note

Funding Information:
This work was supported by the NRF (2010-0023798 and 2011-0028163), by the MEST Pioneer Research Center Program (2011-0027905), and by KU-KIST School Joint Research Program.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4798288

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title = "Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect",

abstract = "We theoretically investigate the switching of a perpendicular magnetic layer by in-plane charge current due to the spin Hall effect. We find that in the high damping regime, the threshold switching current is independent of the damping constant and is almost linearly proportional to both effective perpendicular magnetic anisotropy field and external in-plane field applied along the current direction. We obtain an analytic expression of the threshold current, in excellent agreement with numerical results. Based on the expression, we find that magnetization switching induced by the spin Hall effect can be practically useful when it is combined with voltage-controlled anisotropy change.",

author = "Lee, \{Ki Seung\} and Lee, \{Seo Won\} and Min, \{Byoung Chul\} and Lee, \{Kyoung Jin\}",

note = "Funding Information: This work was supported by the NRF (2010-0023798 and 2011-0028163), by the MEST Pioneer Research Center Program (2011-0027905), and by KU-KIST School Joint Research Program.",

year = "2013",

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doi = "10.1063/1.4798288",

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T1 - Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect

AU - Lee, Ki Seung

AU - Lee, Seo Won

AU - Min, Byoung Chul

AU - Lee, Kyoung Jin

N1 - Funding Information: This work was supported by the NRF (2010-0023798 and 2011-0028163), by the MEST Pioneer Research Center Program (2011-0027905), and by KU-KIST School Joint Research Program.

PY - 2013/3/18

Y1 - 2013/3/18

N2 - We theoretically investigate the switching of a perpendicular magnetic layer by in-plane charge current due to the spin Hall effect. We find that in the high damping regime, the threshold switching current is independent of the damping constant and is almost linearly proportional to both effective perpendicular magnetic anisotropy field and external in-plane field applied along the current direction. We obtain an analytic expression of the threshold current, in excellent agreement with numerical results. Based on the expression, we find that magnetization switching induced by the spin Hall effect can be practically useful when it is combined with voltage-controlled anisotropy change.

AB - We theoretically investigate the switching of a perpendicular magnetic layer by in-plane charge current due to the spin Hall effect. We find that in the high damping regime, the threshold switching current is independent of the damping constant and is almost linearly proportional to both effective perpendicular magnetic anisotropy field and external in-plane field applied along the current direction. We obtain an analytic expression of the threshold current, in excellent agreement with numerical results. Based on the expression, we find that magnetization switching induced by the spin Hall effect can be practically useful when it is combined with voltage-controlled anisotropy change.

UR - https://www.scopus.com/pages/publications/84875696751

U2 - 10.1063/1.4798288

DO - 10.1063/1.4798288

M3 - Article

AN - SCOPUS:84875696751

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 112410

ER -

Threshold current for switching of a perpendicular magnetic layer induced by spin Hall effect

Abstract

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