Threshold voltage shift by controlling Ga in solution processed Si-In-Zn-O thin film transistors

Jun Young Choi, Sangsig Kim, Sang Yeol Lee

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


The threshold voltage change of solution processed gallium-silicon-indium- zinc oxide (GSIZO) thin film transistors (TFTs) annealed at 200 °C has been investigated depending on gallium ratio. GSIZO thin films were formed with various gallium ratios from 0.01 to 1 M ratio. The 30 nm-thick GSIZO film exhibited optimized electrical characteristics, such as field effect mobility (μ FE) of 2.2 × 10 - 2 cm 2/V•s, subthreshold swing (S.S) of 0.11 V/dec, and on/off current ratio (I on/off) of above 10 5. The variation of gallium metal cation has an effect on the threshold voltage (V th) and the field effect mobility (μ FE). The V th was shifted toward positive direction from - 5.2 to - 0.4 V as increasing gallium ratio, and μ FE was decreased from 2.2 × 10 - 2 to 5 × 10 - 3 cm 2/V s. These results indicated that gallium was acted as carrier suppressor by degenerating oxygen vacancy. The electrical property of GSIZO TFTs has been analyzed as a function of the gallium ratio in SIZO system, and it clearly showed that variation of gallium contents could change on the performance of TFTs.

Original languageEnglish
Pages (from-to)3774-3777
Number of pages4
JournalThin Solid Films
Issue number10
Publication statusPublished - 2012 Mar 1


  • Chemical deposition from solution
  • Low temperature
  • Threshold voltage
  • Zinc oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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