Abstract
The threshold voltage change of solution processed gallium-silicon-indium- zinc oxide (GSIZO) thin film transistors (TFTs) annealed at 200 °C has been investigated depending on gallium ratio. GSIZO thin films were formed with various gallium ratios from 0.01 to 1 M ratio. The 30 nm-thick GSIZO film exhibited optimized electrical characteristics, such as field effect mobility (μ FE) of 2.2 × 10 - 2 cm 2/V•s, subthreshold swing (S.S) of 0.11 V/dec, and on/off current ratio (I on/off) of above 10 5. The variation of gallium metal cation has an effect on the threshold voltage (V th) and the field effect mobility (μ FE). The V th was shifted toward positive direction from - 5.2 to - 0.4 V as increasing gallium ratio, and μ FE was decreased from 2.2 × 10 - 2 to 5 × 10 - 3 cm 2/V s. These results indicated that gallium was acted as carrier suppressor by degenerating oxygen vacancy. The electrical property of GSIZO TFTs has been analyzed as a function of the gallium ratio in SIZO system, and it clearly showed that variation of gallium contents could change on the performance of TFTs.
| Original language | English |
|---|---|
| Pages (from-to) | 3774-3777 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 520 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2012 Mar 1 |
Keywords
- Chemical deposition from solution
- Low temperature
- Threshold voltage
- Zinc oxide
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry