Keyphrases
Metal-semiconductor-metal
100%
Threshold Voltage Shift
100%
Fin Field-effect Transistor (FinFET)
100%
Random Dopant Fluctuation
71%
Metal-insulator-semiconductor
57%
Vth Variation
28%
Cm(III)
28%
Fin Height
28%
Tall Fins
28%
Aspect Ratio
14%
Heavily Doped
14%
Three-dimensional (3D)
14%
Threshold Voltage
14%
Device Performance
14%
Metal-insulator-semiconductor Structures
14%
High Aspect Ratio
14%
Doping Concentration
14%
Channel Width
14%
On-state
14%
Drain Regions
14%
TCAD Simulation
14%
Drive Current
14%
Wide Channels
14%
Fin Width
14%
Drain Doping
14%
ZnO Interlayer
14%
Optimal Aspect Ratio
14%
Engineering
Dopants
100%
Interlayer
100%
Fin Height
40%
Aspect Ratio
40%
Metrics
20%
Device Performance
20%
High Aspect Ratio
20%
Drain Region
20%
Current Drive
20%
Fin Width
20%
Semiconductor Structure
20%
Satisfactory Level
20%
Controllability
20%
Material Science
Doping (Additives)
100%
ZnO
20%
Silicon
20%
Semiconductor Structure
20%