TY - JOUR
T1 - Ti-Doped GaOx Resistive Switching Memory with Self-Rectifying Behavior by Using NbOx/Pt Bilayers
AU - Park, Ju Hyun
AU - Jeon, Dong Su
AU - Kim, Tae Geun
N1 - Funding Information:
This work was supported by a National Research Foundation of Korea (NRF) grant, funded by the Korean government (Ministry of Science, ICT & Future Planning, No. 2016R1A3B1908249). The authors are also grateful for support from the Samsung semiconductor research center at Korea University.
Funding Information:
This work was supported by a National Research Foundation of Korea grant, funded by the Korean government (Ministry of Science ICT & Future Planning, No. 2016R1A3B1908249). The authors are also grateful for support from the Samsung semiconductor research center at Korea University.
PY - 2017/12/13
Y1 - 2017/12/13
N2 - Crossbar arrays (CBAs) with resistive random access memory (ReRAM) constitute an established architecture for high-density memory. However, sneak paths via unselected cells increase the total power consumption of these devices and limit the array size. To eliminate such sneak-path problems, we propose a Ti/GaOx/NbOx/Pt structure with a self-rectifying resistive-switching (RS) behavior. In this structure, to reduce the operating voltage, we used a Ti/GaOx stack to increase the number of trap sites in the RS GaOx layer through interfacial reactions between the Ti and GaOx layers. This increase enables easier carrier transport with reduced electric fields. We then adopted a NbOx/Pt stack to add rectifying behavior to the RS GaOx layer. This behavior is a result of the large Schottky barrier height between the NbOx and Pt layers. Finally, both the Ti/GaOx and NbOx/Pt stacks were combined to realize a self-rectifying ReRAM device, which exhibited excellent performance. Characteristics of the device include a low operating voltage range (â'2.8 to 2.5 V), high on/off ratios (â1/420), high selectivity (â1/4104), high operating speeds (200-500 ns), a very low forming voltage (â1/43 V), stable operation, and excellent uniformity for high-density CBA-based ReRAM applications.
AB - Crossbar arrays (CBAs) with resistive random access memory (ReRAM) constitute an established architecture for high-density memory. However, sneak paths via unselected cells increase the total power consumption of these devices and limit the array size. To eliminate such sneak-path problems, we propose a Ti/GaOx/NbOx/Pt structure with a self-rectifying resistive-switching (RS) behavior. In this structure, to reduce the operating voltage, we used a Ti/GaOx stack to increase the number of trap sites in the RS GaOx layer through interfacial reactions between the Ti and GaOx layers. This increase enables easier carrier transport with reduced electric fields. We then adopted a NbOx/Pt stack to add rectifying behavior to the RS GaOx layer. This behavior is a result of the large Schottky barrier height between the NbOx and Pt layers. Finally, both the Ti/GaOx and NbOx/Pt stacks were combined to realize a self-rectifying ReRAM device, which exhibited excellent performance. Characteristics of the device include a low operating voltage range (â'2.8 to 2.5 V), high on/off ratios (â1/420), high selectivity (â1/4104), high operating speeds (200-500 ns), a very low forming voltage (â1/43 V), stable operation, and excellent uniformity for high-density CBA-based ReRAM applications.
KW - Schottky emission
KW - crossbar array
KW - resistive switching
KW - selectivity
KW - self-rectifying
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U2 - 10.1021/acsami.7b10266
DO - 10.1021/acsami.7b10266
M3 - Article
C2 - 29139293
AN - SCOPUS:85038214997
SN - 1944-8244
VL - 9
SP - 43336
EP - 43342
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
IS - 49
ER -