Abstract
We measured the time-resolved differential reflectivity, ΔR, of Ga 1-xMn xAs for x ≤ 0.05 for various excitation wavelengths and compared with the signals from semi-insulating GaAs substrates. The sign of ΔR from Ga 1-xMn xAs (x = 0.015 and x = 0.03) was negative at 295 K for photon energies larger than bandgap, which was ascribed to defect-induced absorption or a reduction of exciton bleaching. We also discuss the screening of Mn alloy potential fluctuations by photocarriers in the time-resolved differential reflection of Ga 1-xMn xAs.
Original language | English |
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Pages (from-to) | 1611-1614 |
Number of pages | 4 |
Journal | Journal of the Korean Physical Society |
Volume | 49 |
Issue number | 4 |
Publication status | Published - 2006 Oct |
Keywords
- GaMnAs
- Pump-probe
- Time-resolved reflectivity
ASJC Scopus subject areas
- Physics and Astronomy(all)