Time-resolved differential reflection measurements on Ga 1-xMn xAs

Shin Kim; Eunsoon Oh; J. U. Lee; D. S. Kim; S. Lee; J. K. Furdyna

Time-resolved differential reflection measurements on Ga _1-xMn _xAs

Shin Kim, Eunsoon Oh, J. U. Lee, D. S. Kim, S. Lee, J. K. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We measured the time-resolved differential reflectivity, ΔR, of Ga _1-xMn _xAs for x ≤ 0.05 for various excitation wavelengths and compared with the signals from semi-insulating GaAs substrates. The sign of ΔR from Ga _1-xMn _xAs (x = 0.015 and x = 0.03) was negative at 295 K for photon energies larger than bandgap, which was ascribed to defect-induced absorption or a reduction of exciton bleaching. We also discuss the screening of Mn alloy potential fluctuations by photocarriers in the time-resolved differential reflection of Ga _1-xMn _xAs.

Original language	English
Pages (from-to)	1611-1614
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	49
Issue number	4
Publication status	Published - 2006 Oct

Keywords

GaMnAs
Pump-probe
Time-resolved reflectivity

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

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title = "Time-resolved differential reflection measurements on Ga 1-xMn xAs",

abstract = "We measured the time-resolved differential reflectivity, ΔR, of Ga 1-xMn xAs for x ≤ 0.05 for various excitation wavelengths and compared with the signals from semi-insulating GaAs substrates. The sign of ΔR from Ga 1-xMn xAs (x = 0.015 and x = 0.03) was negative at 295 K for photon energies larger than bandgap, which was ascribed to defect-induced absorption or a reduction of exciton bleaching. We also discuss the screening of Mn alloy potential fluctuations by photocarriers in the time-resolved differential reflection of Ga 1-xMn xAs.",

keywords = "GaMnAs, Pump-probe, Time-resolved reflectivity",

author = "Shin Kim and Eunsoon Oh and Lee, {J. U.} and Kim, {D. S.} and S. Lee and Furdyna, {J. K.}",

year = "2006",

month = oct,

language = "English",

volume = "49",

pages = "1611--1614",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

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TY - JOUR

T1 - Time-resolved differential reflection measurements on Ga 1-xMn xAs

AU - Kim, Shin

AU - Oh, Eunsoon

AU - Lee, J. U.

AU - Kim, D. S.

AU - Lee, S.

AU - Furdyna, J. K.

PY - 2006/10

Y1 - 2006/10

N2 - We measured the time-resolved differential reflectivity, ΔR, of Ga 1-xMn xAs for x ≤ 0.05 for various excitation wavelengths and compared with the signals from semi-insulating GaAs substrates. The sign of ΔR from Ga 1-xMn xAs (x = 0.015 and x = 0.03) was negative at 295 K for photon energies larger than bandgap, which was ascribed to defect-induced absorption or a reduction of exciton bleaching. We also discuss the screening of Mn alloy potential fluctuations by photocarriers in the time-resolved differential reflection of Ga 1-xMn xAs.

AB - We measured the time-resolved differential reflectivity, ΔR, of Ga 1-xMn xAs for x ≤ 0.05 for various excitation wavelengths and compared with the signals from semi-insulating GaAs substrates. The sign of ΔR from Ga 1-xMn xAs (x = 0.015 and x = 0.03) was negative at 295 K for photon energies larger than bandgap, which was ascribed to defect-induced absorption or a reduction of exciton bleaching. We also discuss the screening of Mn alloy potential fluctuations by photocarriers in the time-resolved differential reflection of Ga 1-xMn xAs.

KW - GaMnAs

KW - Pump-probe

KW - Time-resolved reflectivity

UR - http://www.scopus.com/inward/record.url?scp=33751084609&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:33751084609

SN - 0374-4884

VL - 49

SP - 1611

EP - 1614

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 4

ER -

Time-resolved differential reflection measurements on Ga _1-xMn _xAs

Abstract

Keywords

ASJC Scopus subject areas

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