Time-resolved differential reflection measurements on GaMnAs grown by molecular beam epitaxy

Shin Kim, Eunsoon Oh, J. U. Lee, D. S. Kim, S. Lee, J. K. Furdyna

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    5 Citations (Scopus)

    Abstract

    We investigated time-resolved differential reflection in GaMnAs by pump-probe method at various wavelengths. The signals in GaMnAs were found to be more influenced by the compensating nature of the samples, rather than by the Mn concentrations. The time-resolved reflectivity of highly compensated samples exhibited stronger negative ΔR component at photon energies higher than the bandgap energy. This behaviour was similar to that of As+-ion implanted GaAs. Our results suggest that arsenic antisites (AsGa) act as deep donors as in low-temperature grown GaAs and play an important role in compensating holes in GaMnAs.

    Original languageEnglish
    Pages (from-to)3141-3144
    Number of pages4
    JournalPhysica Status Solidi C: Conferences
    Volume2
    Issue number8
    DOIs
    Publication statusPublished - 2005

    ASJC Scopus subject areas

    • Condensed Matter Physics

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