Time-resolved differential reflection measurements on GaMnAs grown by molecular beam epitaxy

Shin Kim; Eunsoon Oh; J. U. Lee; D. S. Kim; S. Lee; J. K. Furdyna

doi:10.1002/pssc.200460734

Time-resolved differential reflection measurements on GaMnAs grown by molecular beam epitaxy

Shin Kim, Eunsoon Oh, J. U. Lee, D. S. Kim, S. Lee, J. K. Furdyna

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We investigated time-resolved differential reflection in GaMnAs by pump-probe method at various wavelengths. The signals in GaMnAs were found to be more influenced by the compensating nature of the samples, rather than by the Mn concentrations. The time-resolved reflectivity of highly compensated samples exhibited stronger negative ΔR component at photon energies higher than the bandgap energy. This behaviour was similar to that of As⁺-ion implanted GaAs. Our results suggest that arsenic antisites (As_Ga) act as deep donors as in low-temperature grown GaAs and play an important role in compensating holes in GaMnAs.

Original language	English
Pages (from-to)	3141-3144
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Volume	2
Issue number	8
DOIs	https://doi.org/10.1002/pssc.200460734
Publication status	Published - 2005

ASJC Scopus subject areas

Condensed Matter Physics

Access to Document

10.1002/pssc.200460734

Cite this

@article{b1f3af30915444b2af974dccacff6df3,

title = "Time-resolved differential reflection measurements on GaMnAs grown by molecular beam epitaxy",

abstract = "We investigated time-resolved differential reflection in GaMnAs by pump-probe method at various wavelengths. The signals in GaMnAs were found to be more influenced by the compensating nature of the samples, rather than by the Mn concentrations. The time-resolved reflectivity of highly compensated samples exhibited stronger negative ΔR component at photon energies higher than the bandgap energy. This behaviour was similar to that of As+-ion implanted GaAs. Our results suggest that arsenic antisites (AsGa) act as deep donors as in low-temperature grown GaAs and play an important role in compensating holes in GaMnAs.",

author = "Shin Kim and Eunsoon Oh and Lee, {J. U.} and Kim, {D. S.} and S. Lee and Furdyna, {J. K.}",

year = "2005",

doi = "10.1002/pssc.200460734",

language = "English",

volume = "2",

pages = "3141--3144",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "8",

}

TY - JOUR

T1 - Time-resolved differential reflection measurements on GaMnAs grown by molecular beam epitaxy

AU - Kim, Shin

AU - Oh, Eunsoon

AU - Lee, J. U.

AU - Kim, D. S.

AU - Lee, S.

AU - Furdyna, J. K.

PY - 2005

Y1 - 2005

N2 - We investigated time-resolved differential reflection in GaMnAs by pump-probe method at various wavelengths. The signals in GaMnAs were found to be more influenced by the compensating nature of the samples, rather than by the Mn concentrations. The time-resolved reflectivity of highly compensated samples exhibited stronger negative ΔR component at photon energies higher than the bandgap energy. This behaviour was similar to that of As+-ion implanted GaAs. Our results suggest that arsenic antisites (AsGa) act as deep donors as in low-temperature grown GaAs and play an important role in compensating holes in GaMnAs.

AB - We investigated time-resolved differential reflection in GaMnAs by pump-probe method at various wavelengths. The signals in GaMnAs were found to be more influenced by the compensating nature of the samples, rather than by the Mn concentrations. The time-resolved reflectivity of highly compensated samples exhibited stronger negative ΔR component at photon energies higher than the bandgap energy. This behaviour was similar to that of As+-ion implanted GaAs. Our results suggest that arsenic antisites (AsGa) act as deep donors as in low-temperature grown GaAs and play an important role in compensating holes in GaMnAs.

UR - http://www.scopus.com/inward/record.url?scp=27344439497&partnerID=8YFLogxK

U2 - 10.1002/pssc.200460734

DO - 10.1002/pssc.200460734

M3 - Article

AN - SCOPUS:27344439497

SN - 1610-1634

VL - 2

SP - 3141

EP - 3144

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 8

ER -

Time-resolved differential reflection measurements on GaMnAs grown by molecular beam epitaxy

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this