Abstract
We investigated time-resolved differential reflection in GaMnAs by pump-probe method at various wavelengths. The signals in GaMnAs were found to be more influenced by the compensating nature of the samples, rather than by the Mn concentrations. The time-resolved reflectivity of highly compensated samples exhibited stronger negative ΔR component at photon energies higher than the bandgap energy. This behaviour was similar to that of As+-ion implanted GaAs. Our results suggest that arsenic antisites (AsGa) act as deep donors as in low-temperature grown GaAs and play an important role in compensating holes in GaMnAs.
Original language | English |
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Pages (from-to) | 3141-3144 |
Number of pages | 4 |
Journal | Physica Status Solidi C: Conferences |
Volume | 2 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2005 |
ASJC Scopus subject areas
- Condensed Matter Physics