Time-resolved differential reflection measurements on GaMnAs grown by molecular beam epitaxy

Shin Kim; Eunsoon Oh; J. U. Lee; D. S. Kim; S. Lee; J. K. Furdyna

doi:10.1002/pssc.200460734

Time-resolved differential reflection measurements on GaMnAs grown by molecular beam epitaxy

Shin Kim, Eunsoon Oh, J. U. Lee, D. S. Kim, S. Lee, J. K. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated time-resolved differential reflection in GaMnAs by pump-probe method at various wavelengths. The signals in GaMnAs were found to be more influenced by the compensating nature of the samples, rather than by the Mn concentrations. The time-resolved reflectivity of highly compensated samples exhibited stronger negative ΔR component at photon energies higher than the bandgap energy. This behaviour was similar to that of As⁺-ion implanted GaAs. Our results suggest that arsenic antisites (As_Ga) act as deep donors as in low-temperature grown GaAs and play an important role in compensating holes in GaMnAs.

Original language	English
Pages (from-to)	3141-3144
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Volume	2
Issue number	8
DOIs	https://doi.org/10.1002/pssc.200460734
Publication status	Published - 2005

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200460734

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title = "Time-resolved differential reflection measurements on GaMnAs grown by molecular beam epitaxy",

abstract = "We investigated time-resolved differential reflection in GaMnAs by pump-probe method at various wavelengths. The signals in GaMnAs were found to be more influenced by the compensating nature of the samples, rather than by the Mn concentrations. The time-resolved reflectivity of highly compensated samples exhibited stronger negative ΔR component at photon energies higher than the bandgap energy. This behaviour was similar to that of As+-ion implanted GaAs. Our results suggest that arsenic antisites (AsGa) act as deep donors as in low-temperature grown GaAs and play an important role in compensating holes in GaMnAs.",

author = "Shin Kim and Eunsoon Oh and Lee, {J. U.} and Kim, {D. S.} and S. Lee and Furdyna, {J. K.}",

year = "2005",

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language = "English",

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T1 - Time-resolved differential reflection measurements on GaMnAs grown by molecular beam epitaxy

AU - Kim, Shin

AU - Oh, Eunsoon

AU - Lee, J. U.

AU - Kim, D. S.

AU - Lee, S.

AU - Furdyna, J. K.

PY - 2005

Y1 - 2005

N2 - We investigated time-resolved differential reflection in GaMnAs by pump-probe method at various wavelengths. The signals in GaMnAs were found to be more influenced by the compensating nature of the samples, rather than by the Mn concentrations. The time-resolved reflectivity of highly compensated samples exhibited stronger negative ΔR component at photon energies higher than the bandgap energy. This behaviour was similar to that of As+-ion implanted GaAs. Our results suggest that arsenic antisites (AsGa) act as deep donors as in low-temperature grown GaAs and play an important role in compensating holes in GaMnAs.

AB - We investigated time-resolved differential reflection in GaMnAs by pump-probe method at various wavelengths. The signals in GaMnAs were found to be more influenced by the compensating nature of the samples, rather than by the Mn concentrations. The time-resolved reflectivity of highly compensated samples exhibited stronger negative ΔR component at photon energies higher than the bandgap energy. This behaviour was similar to that of As+-ion implanted GaAs. Our results suggest that arsenic antisites (AsGa) act as deep donors as in low-temperature grown GaAs and play an important role in compensating holes in GaMnAs.

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DO - 10.1002/pssc.200460734

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JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 8

ER -

Time-resolved differential reflection measurements on GaMnAs grown by molecular beam epitaxy

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