Time-resolved differential reflection measurements on GaMnAs grown by molecular beam epitaxy

Shin Kim; Eunsoon Oh; J. U. Lee; D. S. Kim; S. Lee; J. K. Furdyna

doi:10.1002/pssc.200460734

Time-resolved differential reflection measurements on GaMnAs grown by molecular beam epitaxy

Shin Kim
, Eunsoon Oh^*
, J. U. Lee
, D. S. Kim
, S. Lee
, J. K. Furdyna

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We investigated time-resolved differential reflection in GaMnAs by pump-probe method at various wavelengths. The signals in GaMnAs were found to be more influenced by the compensating nature of the samples, rather than by the Mn concentrations. The time-resolved reflectivity of highly compensated samples exhibited stronger negative ΔR component at photon energies higher than the bandgap energy. This behaviour was similar to that of As⁺-ion implanted GaAs. Our results suggest that arsenic antisites (As_Ga) act as deep donors as in low-temperature grown GaAs and play an important role in compensating holes in GaMnAs.

Original language	English
Pages (from-to)	3141-3144
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Volume	2
Issue number	8
DOIs	https://doi.org/10.1002/pssc.200460734
Publication status	Published - 2005

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.200460734

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title = "Time-resolved differential reflection measurements on GaMnAs grown by molecular beam epitaxy",

abstract = "We investigated time-resolved differential reflection in GaMnAs by pump-probe method at various wavelengths. The signals in GaMnAs were found to be more influenced by the compensating nature of the samples, rather than by the Mn concentrations. The time-resolved reflectivity of highly compensated samples exhibited stronger negative ΔR component at photon energies higher than the bandgap energy. This behaviour was similar to that of As+-ion implanted GaAs. Our results suggest that arsenic antisites (AsGa) act as deep donors as in low-temperature grown GaAs and play an important role in compensating holes in GaMnAs.",

author = "Shin Kim and Eunsoon Oh and Lee, \{J. U.\} and Kim, \{D. S.\} and S. Lee and Furdyna, \{J. K.\}",

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T1 - Time-resolved differential reflection measurements on GaMnAs grown by molecular beam epitaxy

AU - Kim, Shin

AU - Oh, Eunsoon

AU - Lee, J. U.

AU - Kim, D. S.

AU - Lee, S.

AU - Furdyna, J. K.

PY - 2005

Y1 - 2005

N2 - We investigated time-resolved differential reflection in GaMnAs by pump-probe method at various wavelengths. The signals in GaMnAs were found to be more influenced by the compensating nature of the samples, rather than by the Mn concentrations. The time-resolved reflectivity of highly compensated samples exhibited stronger negative ΔR component at photon energies higher than the bandgap energy. This behaviour was similar to that of As+-ion implanted GaAs. Our results suggest that arsenic antisites (AsGa) act as deep donors as in low-temperature grown GaAs and play an important role in compensating holes in GaMnAs.

AB - We investigated time-resolved differential reflection in GaMnAs by pump-probe method at various wavelengths. The signals in GaMnAs were found to be more influenced by the compensating nature of the samples, rather than by the Mn concentrations. The time-resolved reflectivity of highly compensated samples exhibited stronger negative ΔR component at photon energies higher than the bandgap energy. This behaviour was similar to that of As+-ion implanted GaAs. Our results suggest that arsenic antisites (AsGa) act as deep donors as in low-temperature grown GaAs and play an important role in compensating holes in GaMnAs.

UR - https://www.scopus.com/pages/publications/27344439497

U2 - 10.1002/pssc.200460734

DO - 10.1002/pssc.200460734

M3 - Article

AN - SCOPUS:27344439497

SN - 1610-1634

VL - 2

SP - 3141

EP - 3144

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 8

ER -

Time-resolved differential reflection measurements on GaMnAs grown by molecular beam epitaxy

Abstract

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