Abstract
Indium tin oxide (ITO) thin films were deposited by ion beam sputtering. This paper aimed at the reach of high conductivity and high transmittance simultaneously at relatively low substrate temperature. In order to reach the objects, the influences of substrate temperature, ion beam energy, and oxygen gas flowing rate on the properties of deposited ITO films were investigated. Resistivity showed the lowest value of 1.5 × 10-4 Ω cm on the films deposited by 1.3 keV Ar ions at 100°C. The microstructure of the films was sub-grain (domain) structure. The ITO films have above 80% of transmittance in the visible wavelength including that of the glass substrate.
| Original language | English |
|---|---|
| Article number | 28 |
| Pages (from-to) | 211-218 |
| Number of pages | 8 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 65 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2001 Jan |
Bibliographical note
Funding Information:This work was supported by grant No. 981-0805-026-2 from the Basic Research Program of the Korean Science and Engineering Foundation.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
