Abstract
We report on the electrical properties of TiN(30 nm)/Al(200 nm) Ohmic contacts to N-face n -type GaN for high-performance vertical light-emitting diodes and compare them with those of Ti(30 nm)/Al(200 nm) contacts. Both the as-deposited samples show Ohmic behaviors with contact resistivity of (6.0-7.2) × 10-4 ∑ cm2. However, annealing the samples at 300 °C causes the degradation of their electrical properties. Furthermore, unlike the TiN/Al contacts, the Ti/Al contacts suffer from aging degradation when exposed to air. Based on the x-ray photoemission spectroscopy and secondary ion mass spectrometry results, Ohmic formation and degradation mechanisms are briefly described and discussed.
Original language | English |
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Article number | 042102 |
Journal | Applied Physics Letters |
Volume | 94 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2009 |
Bibliographical note
Funding Information:This work was supported by Manpower Development Program for Energy and Resources of the Ministry of Knowledge and Economy (Grant No. 2008-E-AP-HM-P-16-0000), and the Korea Research Foundation Grant funded by the Korean Government (KRF-2008-313-D00593).
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)