Ti3C2-Based MXene Oxide Nanosheets for Resistive Memory and Synaptic Learning Applications

Atul C. Khot, Tukaram D. Dongale, Ju Hyun Park, Arul Varman Kesavan, Tae Geun Kim

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83 Citations (Scopus)


MXene, a new state-of-the-art two-dimensional (2D) nanomaterial, has attracted considerable interest from both industry and academia because of its excellent electrical, mechanical, and chemical properties. However, MXene-based device engineering has rarely been reported. In this study, we explored Ti3C2 MXene for digital and analog computing applications by engineering the top electrode. For this purpose, Ti3C2 MXene was synthesized by a simple chemical process, and its structural, compositional, and morphological properties were studied using various analytical tools. Finally, we explored its potential application in bipolar resistive switching (RS) and synaptic learning devices. In particular, the effect of the top electrode (Ag, Pt, and Al) on the RS properties of the Ti3C2 MXene-based memory devices was thoroughly investigated. Compared with the Ag and Pt top electrode-based devices, the Al/Ti3C2/Pt device exhibited better RS and operated more reliably, as determined by the evaluation of the charge-magnetic property and memory endurance and retention. Thus, we selected the Al/Ti3C2/Pt memristive device to mimic the potentiation and depression synaptic properties and spike-timing-dependent plasticity-based Hebbian learning rules. Furthermore, the electron transport in this device was found to occur by a filamentary RS mechanism (based on oxidized Ti3C2 MXene), as determined by analyzing the electrical fitting curves. The results suggest that the 2D Ti3C2 MXene is an excellent nanomaterial for non-volatile memory and synaptic learning applications.

Original languageEnglish
Pages (from-to)5216-5227
Number of pages12
JournalACS Applied Materials and Interfaces
Issue number4
Publication statusPublished - 2021 Feb 3

Bibliographical note

Funding Information:
This study was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea Government (no. 2016R1A3B 1908249). The authors would like to thank the Samsung Semiconductor Research Center in Korea University for its support.

Funding Information:
A.C.K. and T.D.D. conceived the idea and carried out the experiments. J.H.P. and A.V.K. provided professional suggestions and helped during the experiments. A.C.K. and T.D.D. analyzed the data and wrote the paper. T.G.K. assisted with paper writing, provided resources, and was responsible for funding acquisition.

Publisher Copyright:


  • 2D nanomaterial
  • TiCMXene
  • memristive effect
  • resistive switching
  • synaptic learning

ASJC Scopus subject areas

  • General Materials Science


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