Titanium-substituted Bi1.5Zn1.0Nb1.5O 7 for high-density and low-temperature-coefficient-of-capacitance MIM capacitor by low-temperature process (300 °c)

Kwang Hwan Cho; Min Gyu Kang; Chong Yun Kang; Seok Jin Yoon; Youngpak Lee

doi:10.1109/LED.2010.2043212

Titanium-substituted Bi_1.5Zn_1.0Nb_1.5O ₇ for high-density and low-temperature-coefficient-of-capacitance MIM capacitor by low-temperature process (300 °c)

Kwang Hwan Cho, Min Gyu Kang, Chong Yun Kang, Seok Jin Yoon, Youngpak Lee

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A high-density metalinsulatormetal (MIM) capacitor at 300 °C with a titanium-substituted Bi_1.5ZnNb_1.5O₇ (BZN) dielectric prepared by physical vapor deposition is presented for the first time. Improvements have been achieved in terms of both capacitance density and temperature coefficient of capacitance (TCC) for MIM capacitors. A 67-nm-thick (Bi_1.5Zn_0.5)(Zn_0.4Nb_1.3Ti _0.3O₇) film has exhibited a high capacitance density of 14.8 fF/cm² at 100 kHz. The leakage current density is low, which is approximately 7.69 nA/cm² at 1 V. The values of linear voltage and TCC are approximately 156 ppm/V² and 98 ppm/°C at 100 kHz, respectively. All these make the Ti-substituted BZN capacitor very suitable for use in silicon RF and mixed-signal IC applications.

Original language	English
Article number	5446363
Pages (from-to)	473-475
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	5
DOIs	https://doi.org/10.1109/LED.2010.2043212
Publication status	Published - 2010 May

Bibliographical note

Funding Information:
Manuscript received December 7, 2009; revised February 1, 2010. Date of publication April 12, 2010; date of current version April 23, 2010. This work was supported in part by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy and in part by a joint Korean–Israel research grant funded by the Ministry of Education, Science, and Technology, Korea. The review of this letter was arranged by Editor A. Z. Wang.

Keywords

Capacitance density
Metal-insulator-metal (MIM) capacitor
Temperature coefficient of capacitance (TCC)
Ti-substituted BiZnNbO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2010.2043212

Cite this

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title = "Titanium-substituted Bi1.5Zn1.0Nb1.5O 7 for high-density and low-temperature-coefficient-of-capacitance MIM capacitor by low-temperature process (300 °c)",

abstract = "A high-density metalinsulatormetal (MIM) capacitor at 300 °C with a titanium-substituted Bi1.5ZnNb1.5O7 (BZN) dielectric prepared by physical vapor deposition is presented for the first time. Improvements have been achieved in terms of both capacitance density and temperature coefficient of capacitance (TCC) for MIM capacitors. A 67-nm-thick (Bi1.5Zn0.5)(Zn0.4Nb1.3Ti 0.3O7) film has exhibited a high capacitance density of 14.8 fF/cm2 at 100 kHz. The leakage current density is low, which is approximately 7.69 nA/cm2 at 1 V. The values of linear voltage and TCC are approximately 156 ppm/V2 and 98 ppm/°C at 100 kHz, respectively. All these make the Ti-substituted BZN capacitor very suitable for use in silicon RF and mixed-signal IC applications.",

keywords = "Capacitance density, Metal-insulator-metal (MIM) capacitor, Temperature coefficient of capacitance (TCC), Ti-substituted BiZnNbO",

author = "Cho, {Kwang Hwan} and Kang, {Min Gyu} and Kang, {Chong Yun} and Yoon, {Seok Jin} and Youngpak Lee",

note = "Funding Information: Manuscript received December 7, 2009; revised February 1, 2010. Date of publication April 12, 2010; date of current version April 23, 2010. This work was supported in part by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy and in part by a joint Korean–Israel research grant funded by the Ministry of Education, Science, and Technology, Korea. The review of this letter was arranged by Editor A. Z. Wang.",

year = "2010",

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AU - Cho, Kwang Hwan

AU - Kang, Min Gyu

AU - Kang, Chong Yun

AU - Yoon, Seok Jin

AU - Lee, Youngpak

N1 - Funding Information: Manuscript received December 7, 2009; revised February 1, 2010. Date of publication April 12, 2010; date of current version April 23, 2010. This work was supported in part by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy and in part by a joint Korean–Israel research grant funded by the Ministry of Education, Science, and Technology, Korea. The review of this letter was arranged by Editor A. Z. Wang.

PY - 2010/5

Y1 - 2010/5

N2 - A high-density metalinsulatormetal (MIM) capacitor at 300 °C with a titanium-substituted Bi1.5ZnNb1.5O7 (BZN) dielectric prepared by physical vapor deposition is presented for the first time. Improvements have been achieved in terms of both capacitance density and temperature coefficient of capacitance (TCC) for MIM capacitors. A 67-nm-thick (Bi1.5Zn0.5)(Zn0.4Nb1.3Ti 0.3O7) film has exhibited a high capacitance density of 14.8 fF/cm2 at 100 kHz. The leakage current density is low, which is approximately 7.69 nA/cm2 at 1 V. The values of linear voltage and TCC are approximately 156 ppm/V2 and 98 ppm/°C at 100 kHz, respectively. All these make the Ti-substituted BZN capacitor very suitable for use in silicon RF and mixed-signal IC applications.

AB - A high-density metalinsulatormetal (MIM) capacitor at 300 °C with a titanium-substituted Bi1.5ZnNb1.5O7 (BZN) dielectric prepared by physical vapor deposition is presented for the first time. Improvements have been achieved in terms of both capacitance density and temperature coefficient of capacitance (TCC) for MIM capacitors. A 67-nm-thick (Bi1.5Zn0.5)(Zn0.4Nb1.3Ti 0.3O7) film has exhibited a high capacitance density of 14.8 fF/cm2 at 100 kHz. The leakage current density is low, which is approximately 7.69 nA/cm2 at 1 V. The values of linear voltage and TCC are approximately 156 ppm/V2 and 98 ppm/°C at 100 kHz, respectively. All these make the Ti-substituted BZN capacitor very suitable for use in silicon RF and mixed-signal IC applications.

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KW - Ti-substituted BiZnNbO

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