Titanium-substituted Bi1.5Zn1.0Nb1.5O 7 for high-density and low-temperature-coefficient-of-capacitance MIM capacitor by low-temperature process (300 °c)

Kwang Hwan Cho, Min Gyu Kang, Chong Yun Kang, Seok Jin Yoon, Youngpak Lee

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    3 Citations (Scopus)

    Abstract

    A high-density metalinsulatormetal (MIM) capacitor at 300 °C with a titanium-substituted Bi1.5ZnNb1.5O7 (BZN) dielectric prepared by physical vapor deposition is presented for the first time. Improvements have been achieved in terms of both capacitance density and temperature coefficient of capacitance (TCC) for MIM capacitors. A 67-nm-thick (Bi1.5Zn0.5)(Zn0.4Nb1.3Ti 0.3O7) film has exhibited a high capacitance density of 14.8 fF/cm2 at 100 kHz. The leakage current density is low, which is approximately 7.69 nA/cm2 at 1 V. The values of linear voltage and TCC are approximately 156 ppm/V2 and 98 ppm/°C at 100 kHz, respectively. All these make the Ti-substituted BZN capacitor very suitable for use in silicon RF and mixed-signal IC applications.

    Original languageEnglish
    Article number5446363
    Pages (from-to)473-475
    Number of pages3
    JournalIEEE Electron Device Letters
    Volume31
    Issue number5
    DOIs
    Publication statusPublished - 2010 May

    Bibliographical note

    Funding Information:
    Manuscript received December 7, 2009; revised February 1, 2010. Date of publication April 12, 2010; date of current version April 23, 2010. This work was supported in part by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy and in part by a joint Korean–Israel research grant funded by the Ministry of Education, Science, and Technology, Korea. The review of this letter was arranged by Editor A. Z. Wang.

    Keywords

    • Capacitance density
    • Metal-insulator-metal (MIM) capacitor
    • Temperature coefficient of capacitance (TCC)
    • Ti-substituted BiZnNbO

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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